GaN/SiC heterojunction lateral light-control IMPATT diode and fabrication method thereof

Abstract

The embodiment of the invention discloses a GaN / SiC heterojunction lateral light-control IMPATT diode and a fabrication method thereof. The fabrication method comprises the steps of firstly, determining crystal structures and material parameters of n-type GaN and p-type SiC, and calculating lengths of an n region and a p region according to a working efficiency of a target IMPATT diode; secondly,selecting a current crystal form (p) SiC crystal as a substrate, respectively forming an n<+> well , an n well and a p<+> well on the substrate according to the lengths of the n region and the p region, and growing current crystal form (n<+>)GaN, (n)GaN and (p<+>)SiC in the corresponding wells; thirdly, oxidizing a Ga2O3 protection layer and a SiO2 protection layer, covering a shielding layer, respectively etching a first gap and a second gap, and generating a positive electrode and a negative electrode; and finally, etching a third gap, and introducing illumination to control the performanceof the target IMPATT diode to obtain the target IMPATT diode. By implementing the fabrication method, the target IMPATT diode can be controlled by visible light and ultraviolet light.

Description

technical field [0001] The invention relates to the technical field of electronic transistors, in particular to a GaN / SiC heterojunction lateral light-controlled IMPATT (Impact Avalanche and Transist-Time) diode and a preparation method thereof. Background technique [0002] The third-generation wide-bandgap semiconductor materials represented by direct bandgap gallium nitride (GaN) and indirect bandgap silicon carbide (SiC) are characterized by wide bandgap, high breakdown critical field strength, high saturation velocity and high thermal conductivity. And other characteristics become ideal materials for high-frequency, high-temperature, high-voltage, high-power and radiation-resistant electronic devices. GaN's Baliga figure of merit BFOM (Baliga figure of merit), electron mobility and other parameters are higher than the corresponding values ​​of SiC [R.S.Pengelly, et al, IEEE Transactions on Microwave Theory and Techniques, 2012, 60(6): 1764-1783.], It is suitable for hi...

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Problems solved by technology

[0004] The recently developed AlGaN / SiC heterojunction axial IMPATT diode shows excellent application prospects [S. Banerjee, Journal of Semiconductors, 2015, 36(6): 064002-1-8.], which has a higher performance than Si homojunction devices. More excellent large-signal performance, but there is no report on GaN / SiC heterojunction lateral type light-controlled IMPATT diode

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