GaN/SiC heterojunction lateral light-control IMPATT diode and fabrication method thereof

A heterojunction and diode technology, applied in the field of GaN/SiC heterojunction lateral type light-controlled IMPATT diode and its preparation, to achieve the effect of changing the transport

Active Publication Date: 2019-04-12
WENZHOU UNIVERSITY
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The recently developed AlGaN/SiC heterojunction axial IMPATT diode shows excellent application prospects [S. Banerjee, Journal of Semiconductors, 2015, 36(6): 064002-1-8.], which h

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GaN/SiC heterojunction lateral light-control IMPATT diode and fabrication method thereof
  • GaN/SiC heterojunction lateral light-control IMPATT diode and fabrication method thereof
  • GaN/SiC heterojunction lateral light-control IMPATT diode and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0051] Such as figure 1 Shown is an n / p-type GaN / SiC heterojunction lateral type light-controlled IMPATT diode and its preparation method provided in Embodiment 1 of the present invention. The method includes the following steps:

[0052] Step a1, obtain the current crystal form of GaN and SiC and their corresponding material parameters, combine the material parameters of GaN and SiC of the current crystal form with the operating frequency of the target IMPATT diode, and calculate the n region and p of the target IMPATT diode the length of the zone;

[0053] Step a2, select a p-type doped SiC waf...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention discloses a GaN/SiC heterojunction lateral light-control IMPATT diode and a fabrication method thereof. The fabrication method comprises the steps of firstly, determining crystal structures and material parameters of n-type GaN and p-type SiC, and calculating lengths of an n region and a p region according to a working efficiency of a target IMPATT diode; secondly,selecting a current crystal form (p) SiC crystal as a substrate, respectively forming an n<+> well , an n well and a p<+> well on the substrate according to the lengths of the n region and the p region, and growing current crystal form (n<+>)GaN, (n)GaN and (p<+>)SiC in the corresponding wells; thirdly, oxidizing a Ga2O3 protection layer and a SiO2 protection layer, covering a shielding layer, respectively etching a first gap and a second gap, and generating a positive electrode and a negative electrode; and finally, etching a third gap, and introducing illumination to control the performanceof the target IMPATT diode to obtain the target IMPATT diode. By implementing the fabrication method, the target IMPATT diode can be controlled by visible light and ultraviolet light.

Description

technical field [0001] The invention relates to the technical field of electronic transistors, in particular to a GaN / SiC heterojunction lateral light-controlled IMPATT (Impact Avalanche and Transist-Time) diode and a preparation method thereof. Background technique [0002] The third-generation wide-bandgap semiconductor materials represented by direct bandgap gallium nitride (GaN) and indirect bandgap silicon carbide (SiC) are characterized by wide bandgap, high breakdown critical field strength, high saturation velocity and high thermal conductivity. And other characteristics become ideal materials for high-frequency, high-temperature, high-voltage, high-power and radiation-resistant electronic devices. GaN's Baliga figure of merit BFOM (Baliga figure of merit), electron mobility and other parameters are higher than the corresponding values ​​of SiC [R.S.Pengelly, et al, IEEE Transactions on Microwave Theory and Techniques, 2012, 60(6): 1764-1783.], It is suitable for hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18H01L31/107H01L31/0352H01L31/0336
CPCH01L31/0336H01L31/035281H01L31/1075H01L31/18Y02P70/50
Inventor 韦文生郑君鼎俞珠颖
Owner WENZHOU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap