Homotype heterostructure IMPATT diode and manufacturing method thereof

Abstract

The invention discloses a homotype heterostructure IMPATT diode and a manufacturing method thereof. The IMPATT diode comprises an n-type GaN substrate, an n++-GaN cathode ohmic contact layer, an n-GaNdrift region, an n+-GaN avalanche region, an n++-InGaN anode ohmic contact layer and an anode which are sequentially arranged from bottom to top. The passivation layer is located outside the anode, and the cathode is located on the upper layer of an annular table top formed by the n++-GaN cathode ohmic contact layer2 and located outside the passivation layer. Compared with a traditional GaN-basedIMPATT diode, the homotype heterostructure IMPATT diode adopting the homotype heterogeneous material has the advantages that the limitation of a P-type GaN doping process is avoided, the efficiency of the IMPATT diode is linearly improved along with the increase of the doping concentration of an InGaN material, and high conversion efficiency is realized; according to the invention, n-type semiconductor materials are adopted, i.e., n-type doping is adopted, so that the efficiency of the manufacturing process is improved, the manufacturing cost is reduced, and meanwhile, the manufacturing process is completely compatible with the traditional IMPATT diode packaging process.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a homogeneous heterostructure IMPATT diode and a manufacturing method thereof. Background technique [0002] IMPATT devices with various structures are widely used as the main emission source in a wide frequency range (1-400GHz). The maximum output power of an IMPATT diode at a given frequency has a great relationship with the material properties of the materials used. Compared with traditional semiconductor materials (Si and GaAs), GaN has excellent performance in terms of frequency and output power, and GaN-based IMPATT diodes have broad application prospects in the terahertz field (100GHz-10THz). [0003] The P-type doping concentration of the PN junction in the design of traditional GaN-based IMPATT devices has a great influence on the working performance. P-type GaN is difficult to form high-quality P-type ohmic contacts because of the immature manufacturing technolog...

AI Technical Summary

Problems solved by technology

When the concentration is greater than a certain value, the DC-AC conversion efficiency of the device will reach a certain saturation value, and the IMPATT avalanche process will cause saturation of electron-hole pairs due to the limitation of doping concentration, which will affect the output efficiency of IMPATT

[0004] If the Schottky junction is used, on the one hand, it can indeed eliminate the series resistance effect of the PN junction of the GaN-based IMPATT and improve efficiency. Too high and the voltage drop does not match the requirements of the line, resulting in a large reverse leakage, which affects the performance of IMPATT and cannot obtain ideal conversion efficiency performance

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