A homogeneous heterostructure impatt diode and manufacturing method thereof

Abstract

The invention discloses a homogeneous heterostructure IMPATT diode and a manufacturing method thereof. The IMPATT diode includes an n-type GaN substrate, an n++-GaN cathode ohmic contact layer, an n-GaN drift region, and an n+-GaN avalanche arranged sequentially from bottom to top. region, n++‑InGaN anode ohmic contact layer and anode; the passivation layer is located outside the anode, and the cathode is located on the upper layer of the annular mesa formed by the n++‑GaN cathode ohmic contact layer 2 and outside the passivation layer; using the same type of heterogeneous material, which is different from the traditional Compared with the GaN-based IMPATT diode, it avoids the limitation of the P-type GaN doping process. As the doping concentration of the InGaN material increases, the efficiency of the IMPATT diode also increases linearly, achieving high conversion efficiency; The same n-type semiconductor material, that is, all are n-type doped, improves the efficiency of the manufacturing process, reduces the manufacturing cost, and is fully compatible with the traditional IMPATT diode packaging process.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a homogeneous heterostructure IMPATT diode and a manufacturing method thereof. Background technique [0002] IMPATT devices with various structures are widely used as the main emission source in a wide frequency range (1-400GHz). The maximum output power of an IMPATT diode at a given frequency has a great relationship with the material properties of the materials used. Compared with traditional semiconductor materials (Si and GaAs), GaN has excellent performance in terms of frequency and output power, and GaN-based IMPATT diodes have broad application prospects in the terahertz field (100GHz-10THz). [0003] The P-type doping concentration of the PN junction in the design of traditional GaN-based IMPATT devices has a great influence on the working performance. P-type GaN is difficult to form high-quality P-type ohmic contacts because of the immature manufacturing technolog...

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Problems solved by technology

When the concentration is greater than a certain value, the DC-AC conversion efficiency of the device will reach a certain saturation value, and the IMPATT avalanche process will cause saturation of electron-hole pairs due to the limitation of doping concentration, which will affect the output efficiency of IMPATT

[0004] If the Schottky junction is used, on the one hand, it can indeed eliminate the series resistance effect of the PN junction of the GaN-based IMPATT and improve efficiency. Too high and the voltage drop does not match the requirements of the line, resulting in a large reverse leakage, which affects the performance of IMPATT and cannot obtain ideal conversion efficiency performance

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