Wide bandgap semiconductor heterojunction transit time diode noise detection method and system

Abstract

The invention provides a wide bandgap semiconductor heterojunction transit time diode noise detection method and system. The method comprises the steps that: a to-be-detected diode (DUT) is obtained,corresponding noise factors which comprise an ionization avalanche effect, a quantum effect and a field tunneling effect are selected, and a preset continuity equation, a current density equation anda Poisson equation are corrected, wherein the DUT is a collision ionization avalanche transit time IMPATT diode or a mixed tunneling avalanche transit time MITATT diode; the DUT model is gridded, andan equation set consisting of the corrected continuity equation, current density equation and Poisson equation is discretized; the discretized equation set is solved, so that a structure, steady-stateperformance and alternating-current performance can be obtained; and a noise model is constructed, and the structure, steady-state performance and alternating-current performance parameter values areimported into the noise model and boundary conditions so as to be subjected to double iterative computation to obtain a noise parameter value of the DUT. With the wide bandgap semiconductor heterojunction transit time diode noise detection method and system of the embodiment of the invention adopted, the noise detection precision of the DUT can be improved.

Description

technical field [0001] The invention relates to the technical field of diode detection, in particular to a method for detecting noise of a wide bandgap semiconductor heterojunction transit time diode. Background technique [0002] Impact Ionization Avalanche Transit Time (IMPATT) diodes and Mixed Tunneling Avalanche Transit Time (MITATT) diodes are terahertz (THz) diodes with high efficiency, low cost and broad application prospects. wave solid-state power source. The IMPATT diode is a semiconductor device that uses the combination of the injection delay effect of the ionization avalanche multiplied carrier and the carrier drift transit delay effect to produce a negative resistance effect; the MITATT diode uses the field-induced tunneling and ionization avalanche to multiply the carrier injection The combination of the delay effect and the carrier drift transition delay effect produces a semiconductor device with a negative resistance effect. Ionization avalanche plays a m...

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the embodiments of the present invention is to provide a wide-bandgap semiconductor heterojunction transit time diode noise detection method and system, which can overcome the problems of low detection accuracy and large error of diode noise detection in the prior art

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