Wide bandgap semiconductor heterojunction transit time diode noise detection method and system

A technology of wide bandgap semiconductor and transit time, which is applied in the field of diode noise detection of wide bandgap semiconductor heterojunction transit time, can solve the problems of large error and low detection accuracy of diode noise, and achieves overcoming large error and superior performance. , Overcome the effect of low noise detection accuracy

Active Publication Date: 2021-02-12
WENZHOU UNIVERSITY
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  • Abstract
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  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the embodiments of the present invention is to provide a wide-bandgap semiconductor heterojunction transit time

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  • Wide bandgap semiconductor heterojunction transit time diode noise detection method and system
  • Wide bandgap semiconductor heterojunction transit time diode noise detection method and system
  • Wide bandgap semiconductor heterojunction transit time diode noise detection method and system

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Embodiment Construction

[0041] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0042] like figure 1 As shown, in the embodiment of the present invention, a wide bandgap semiconductor heterojunction transit time diode noise detection method is provided, including the following steps:

[0043] S1. Obtain the measured wide-bandgap semiconductor heterojunction transit time diode, and combine the noise influence factors of the measured wide-bandgap semiconductor heterojunction transit time diode to determine the measured wide-bandgap semiconductor heterojunction transit time The continuity equation, current density equation, and Poisson equation preset by the diode are corrected; among them, the measured wide-bandgap semiconductor heterojunction transit time diode is an impact ionization avalanche transit time IMPATT diode or a hybrid tunneling ...

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Abstract

The invention provides a wide bandgap semiconductor heterojunction transit time diode noise detection method and system. The method comprises the steps that: a to-be-detected diode (DUT) is obtained,corresponding noise factors which comprise an ionization avalanche effect, a quantum effect and a field tunneling effect are selected, and a preset continuity equation, a current density equation anda Poisson equation are corrected, wherein the DUT is a collision ionization avalanche transit time IMPATT diode or a mixed tunneling avalanche transit time MITATT diode; the DUT model is gridded, andan equation set consisting of the corrected continuity equation, current density equation and Poisson equation is discretized; the discretized equation set is solved, so that a structure, steady-stateperformance and alternating-current performance can be obtained; and a noise model is constructed, and the structure, steady-state performance and alternating-current performance parameter values areimported into the noise model and boundary conditions so as to be subjected to double iterative computation to obtain a noise parameter value of the DUT. With the wide bandgap semiconductor heterojunction transit time diode noise detection method and system of the embodiment of the invention adopted, the noise detection precision of the DUT can be improved.

Description

technical field [0001] The invention relates to the technical field of diode detection, in particular to a method for detecting noise of a wide bandgap semiconductor heterojunction transit time diode. Background technique [0002] Impact Ionization Avalanche Transit Time (IMPATT) diodes and Mixed Tunneling Avalanche Transit Time (MITATT) diodes are terahertz (THz) diodes with high efficiency, low cost and broad application prospects. wave solid-state power source. The IMPATT diode is a semiconductor device that uses the combination of the injection delay effect of the ionization avalanche multiplied carrier and the carrier drift transit delay effect to produce a negative resistance effect; the MITATT diode uses the field-induced tunneling and ionization avalanche to multiply the carrier injection The combination of the delay effect and the carrier drift transition delay effect produces a semiconductor device with a negative resistance effect. Ionization avalanche plays a m...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2632
Inventor 韦文生余寿豪张夏彬莫越达黄文喜周迪何明昌
Owner WENZHOU UNIVERSITY
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