Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A wide bandgap semiconductor heterojunction transit time diode noise detection method and system

A technology of wide bandgap semiconductor and transit time, which is applied in the field of wide bandgap semiconductor heterojunction transit time diode noise detection, can solve the problems of low detection accuracy and large error of diode noise, achieve superior performance and overcome large error , Overcome the effect of low noise detection accuracy

Active Publication Date: 2021-04-27
WENZHOU UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the embodiments of the present invention is to provide a wide-bandgap semiconductor heterojunction transit time diode noise detection method and system, which can overcome the problems of low detection accuracy and large error of diode noise detection in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A wide bandgap semiconductor heterojunction transit time diode noise detection method and system
  • A wide bandgap semiconductor heterojunction transit time diode noise detection method and system
  • A wide bandgap semiconductor heterojunction transit time diode noise detection method and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0042] like figure 1 As shown, in the embodiment of the present invention, a wide bandgap semiconductor heterojunction transit time diode noise detection method is provided, including the following steps:

[0043] S1. Obtain the measured wide-bandgap semiconductor heterojunction transit time diode, and combine the noise influence factors of the measured wide-bandgap semiconductor heterojunction transit time diode to determine the measured wide-bandgap semiconductor heterojunction transit time The continuity equation, current density equation, and Poisson equation preset by the diode are corrected; among them, the measured wide-bandgap semiconductor heterojunction transit time diode is an impact ionization avalanche transit time IMPATT diode or a hybrid tunneling ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a wide bandgap semiconductor heterojunction transit time diode noise detection method and system, including obtaining the diode under test (DUT), and selecting corresponding noise factors including ionization avalanche effect, quantum effect, and field-induced tunneling effect , modify the preset continuity equation, current density equation and Poisson equation; where, DUT is the impact ionization avalanche transit time IMPATT diode or the hybrid tunneling avalanche transit time MITATT diode; grid the DUT model, the modified Discretize the equation system consisting of the continuity equation, current density equation and Poisson equation; solve the discretized equation system to obtain the structure, steady-state performance, and AC performance; build a noise model, and combine the structure, steady-state performance, and The AC performance parameter values ​​are imported into the noise model and the boundary conditions for double iterative calculation to obtain the noise parameter values ​​of the DUT. The implementation of the invention can improve the noise detection accuracy of the DUT.

Description

technical field [0001] The invention relates to the technical field of diode detection, in particular to a method for detecting noise of a wide bandgap semiconductor heterojunction transit time diode. Background technique [0002] Impact Ionization Avalanche Transit Time (IMPATT) diodes and Mixed Tunneling Avalanche Transit Time (MITATT) diodes are terahertz (THz) diodes with high efficiency, low cost and broad application prospects. wave solid-state power source. The IMPATT diode is a semiconductor device that uses the combination of the injection delay effect of the ionization avalanche multiplied carrier and the carrier drift transit delay effect to produce a negative resistance effect; the MITATT diode uses the field-induced tunneling and ionization avalanche to multiply the carrier injection The combination of the delay effect and the carrier drift transition delay effect produces a semiconductor device with a negative resistance effect. Ionization avalanche plays a m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2632
Inventor 韦文生余寿豪张夏彬莫越达黄文喜周迪何明昌
Owner WENZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com