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High-frequency high-power IMPATT tube electrical parameter debugging device

A parameter debugging, high-power technology, applied in circuits, short-circuit testing, electrical components, etc., can solve problems such as inability to debug the electrical parameters of IMPATT diodes, and achieve the effects of mechanical tuning thickness adjustment, easy assembly, and simple structure

Active Publication Date: 2021-12-21
EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the existing resonant cavity design is only suitable for IMPATT diodes with coaxial structure, and it is impossible to debug the electrical parameters of IMPATT diodes with high frequency and high power open structure

Method used

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  • High-frequency high-power IMPATT tube electrical parameter debugging device
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  • High-frequency high-power IMPATT tube electrical parameter debugging device

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Embodiment Construction

[0027] To make the present invention clearer, a further description of the drawings A high-frequency electric power IMPATT tube parameter testing device of the invention in conjunction with the following specific embodiments described herein are merely for explaining the present invention, not to limit the present invention .

[0028] This embodiment is an implementation object of the high frequency power electrical parameter based debugging tube IMPATT conventional tooling IMPATT pipe member. Tooling member here in the Application No. 202011165255.5, "A waveguide means output carrier" Chinese patents disclose the specific configuration.

[0029] like figure 1 , The tooling member 2 comprises a frustoconical body 21, the lower surface side of the main body 21 is provided with a step 22, step 22 is connected to an excitation source and lead feeder 26, the upper surface 21 is provided on the side of the main body 22 in a step Gradient of a groove 23, one end 23 of the recess 22 comm...

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Abstract

The invention relates to a high-frequency high-power IMPATT tube electrical parameter debugging device, which comprises a mounting plate, wherein a group of pin mounting holes and waveguide holes are formed in the mounting plate, and the pin mounting holes are connected with positioning pins; an adjusting base is arranged, positioning holes matched with the positioning pins and positioning grooves matched with the outer contour of a tool piece are formed in one side of the adjusting base, the other side of the adjusting base is connected with a clamping device with adjustable tightness, a penetrating through hole groove corresponding to the waveguide holes in position is formed in the clamping device, and a short-circuit piston is matched in the through hole groove; and the adjusting base positions the tool piece through the positioning pins and the positioning grooves and then is detachably and fixedly connected with the mounting plate, and an excitation source feeder line of the tool piece is electrically connected with an excitation source module. The IMPATT tube electrical parameter debugging device is simple in structure and easy to assemble, and high-frequency power output of an IMPATT diode is achieved by combining the combined action of mechanical tuning of the short-circuit piston and electric tuning of excitation source feed; and by adjusting the tightness of the clamping device, mechanical tuning thickness adjustment is achieved, the overall operation is simple and easy to implement, and the debugging efficiency is improved.

Description

Technical field [0001] Technical Field The present invention relates to a millimeter wave solid-state detecting devices, in particular to a high-frequency electric power IMPATT tube parameter testing apparatus. Background technique [0002] IMPATT diode using semiconductor avalanche of collisions and carrier transit time effect, the negative dynamic resistance is obtained, oscillation, the RF output power may be under the action of an external circuit, it may be used to develop a solid-state oscillator core device of the millimeter-wave systems. With the enhancement of system operating frequency millimeter wave, for high frequency power IMPATT tube, a coaxial structure is difficult to achieve the resonance output, now using the output waveguide based on the carrier means open structure, the use of discrete capacitors for impedance matching, reduced set total parameter, high frequency resonant power output. [0003] To achieve resonance output IMPATT tube, IMPATT diodes need to be...

Claims

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Application Information

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IPC IPC(8): H01P11/00G01R31/52
CPCH01P11/00G01R31/52
Inventor 陈婧瑶史一明李文翰潘结斌方岚李泽瑞
Owner EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
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