A high-frequency and high-power impatt tube electric parameter debugging device

A parameter debugging, high-power technology, applied in circuits, short-circuit testing, electrical components, etc., can solve the problem of inability to debug the electrical parameters of IMPATT diodes, and achieve the effects of mechanical tuning thickness adjustment, easy assembly, and improved debugging efficiency.

Active Publication Date: 2022-04-12
EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the existing resonant cavity design is only suitable for IMPATT diodes with coaxial structure, and it is impossible to debug the electrical parameters of IMPATT diodes with high frequency and high power open structure

Method used

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  • A high-frequency and high-power impatt tube electric parameter debugging device
  • A high-frequency and high-power impatt tube electric parameter debugging device
  • A high-frequency and high-power impatt tube electric parameter debugging device

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Embodiment Construction

[0027] In order to make the present invention clearer, a kind of high-frequency high-power IMPATT tube electrical parameter debugging device of the present invention will be further described below in conjunction with the accompanying drawings. The specific embodiments described here are only used to explain the present invention and are not used to limit the present invention. .

[0028] This embodiment is based on the existing IMPATT tube tooling to realize the purpose of debugging the electrical parameters of the high-frequency and high-power IMPATT tube. The specific structure of the tooling here is disclosed in the Chinese patent application number 202011165255.5 "A Waveguide Output Carrying Device".

[0029] Such as figure 1 As shown, the tooling part 2 includes a conical main body 21, and a step 22 is provided on the lower side of the upper surface of the main body 21. The excitation source feeder 26 is connected and drawn out on the step 22, and the upper surface of t...

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Abstract

The invention relates to a high-frequency and high-power IMPATT tube electrical parameter debugging device, which includes a mounting plate, a group of pin mounting holes and waveguide holes are arranged on the mounting plate, and the pin mounting holes are connected with positioning pins; an adjustment seat is provided, and one side of the adjustment seat is provided with The positioning hole matched with the positioning pin and the positioning groove matched with the outer contour of the tooling, and the other side is connected with the clamping device with adjustable tightness. The clamping device is provided with a through-hole slot corresponding to the position of the waveguide hole. Cooperate with the short-circuit piston; the adjustment seat positions the tooling part through the positioning pin and the positioning groove, and then is detachably and fixedly connected with the mounting plate, and the excitation source feeder of the tooling part is electrically connected with the excitation source module. The invention is simple in structure and easy to assemble, and combines the mechanical tuning of the short-circuit piston and the electrical tuning of the excitation source feed to realize the high-frequency power output of the IMPATT diode; by adjusting the tightness of the clamping device, the mechanical tuning thickness adjustment is realized, and the overall The operation is simple and easy, and the debugging efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of millimeter-wave solid-state device detection, in particular to a high-frequency and high-power IMPATT tube electric parameter debugging device. Background technique [0002] IMPATT diodes use the semiconductor internal collision avalanche effect and carrier transit time effect to obtain dynamic negative resistance, which can generate oscillation under the action of an external circuit and output radio frequency power. It can be used in the development of solid-state oscillation sources for core devices in millimeter wave systems. With the improvement of the operating frequency of the millimeter-wave system, for high-frequency and high-power IMPATT tubes, the coaxial structure is difficult to achieve resonant output. Now an open structure based on the waveguide output bearing device is adopted, and discrete capacitors are used for impedance matching to reduce the set Total parameters, to achieve high-frequ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P11/00G01R31/52
CPCH01P11/00G01R31/52
Inventor 陈婧瑶史一明李文翰潘结斌方岚李泽瑞
Owner EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
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