Rotation etching device and wet etching machine

Abstract

The invention discloses a rotation etching device and a wet etching machine which are applied to a semiconductor wet etching process. The rotation etching device comprises a support structure, temperature-controlled heating devices and a nozzle device; the support structure provides a support surface to support a to-be-etched wafer, a predetermined distance is preset between the to-be-etched waferand the support surface, and multiple gas nozzles are uniformly distributed on the face, facing the to-be-etched wafer, of the support surface; the temperature-controlled heating devices are connected with gas pipelines of the edge gas nozzles to heat protective gas in the gas pipelines; and the nozzle device is arranged over the support surface and comprises a nozzle and a liquid conveying pipe,the nozzle is arranged on the face facing the support surface, and the liquid conveying pipe is connected with the end, back to the support surface, of the nozzle. The rotation etching device has theadvantages that by additionally arranging the temperature-controlled heating devices to heat the protective gas, the edge temperature of the wafer is changed, therefore, the etching rate of the waferis increased, the uniformity of the wafer is changed, it is guaranteed that the product uniformity is within the controlled safety quality standard, and the obsolescence risk is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor wet etching technology, in particular to a rotary etching device and a wet etching machine. Background technique [0002] The chemical etching device uses the chemical etching method (also known as wet etching) to directly chemically etch the unprotected parts of the workpiece with a chemical solution. [0003] During the etching process of the rotary etching device of the wet etching machine, the wafer is in a state of high-speed rotation, and the chemical solution used for etching is evenly dispersed from the center of the wafer to the edge of the wafer. As the distance from the center of the circle increases, the chemical solution will gradually increase under the centrifugal force, and the content of the chemical solution spread in the unit area will gradually decrease, causing the etching rate of the chemical solution to decrease gradually with the increase of the radius. The swing of ...

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Problems solved by technology

[0003] During the etching process of the rotary etching device of the wet etching machine, the wafer is in a state of high-speed rotation, and the chemical solution used for etching is evenly dispersed from the center of the wafer to the edge of the wafer. As the distance from the center of the circle increases, the chemical solution will gradually increase under the centrifugal force, and the content of the chemical solution spread in the unit area will gradually decrease, causing the etching rate of the chemical solution to decrease gradually with th

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