A device for extracting ions in a diamond-like thin film ion source

Abstract

The invention discloses a device for guiding out ions in a diamond-like film ion source. The device comprises a partition plate mounted at the left end of a protecting shell. A process gas inlet tube is transversely mounted in the middle of the partition plate. An internal baffle is mounted on the left end face of the partition plate. A mounting flange is fixed on the partition plate on the periphery of the internal baffle. An ion source retaining ring is mounted on the mounting flange. A process gas diffusion plate is mounted on the outer side of the internal baffle in an interval manner. An anode mounted on the internal baffle and the partition plate in a penetrating manner is arranged on the periphery of the process gas diffusion plate. A tungsten wire is arranged between the anode and the process gas diffusion plate. The device has the advantages that the device is novel in structural design, process gas diffusion evenness can be increased effectively by the structural design of the process gas diffusion plate and the anode, and accordingly the evenness and deposition rate of a thin film are increased and can be adjusted.

Description

Technical field: [0001] The invention relates to the manufacture of a diamond-like film, in particular to a device for extracting ions in a diamond-like film ion source. Background technique: [0002] The principle of making diamond-like carbon film by chemical vapor deposition method is as follows: figure 1 As shown, 1. The high-temperature tungsten wire cathode emits thermal electrons; 2. After the process gas enters the vacuum chamber from the back of the tungsten wire through the intake pipe, it diffuses and fills the vacuum chamber; 3. Some electrons collide with the process gas, and the neutral process gas The gas is ionized into carbon ions or hydrocarbon ions; 4. Carbon ions or hydrocarbon ions are deposited on the surface of the substrate to form a diamond-like film. [0003] In order to improve the film deposition efficiency, it is necessary to effectively pull the electrons emitted by the cathode tungsten wire to the outlet of the ion source, so as to increase th...

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Problems solved by technology

[0005] In order to make up for the existing technical problems, the purpose of the present invention is to provide a device for extracting ions in a diamond-like thin film ion source, which effectively solves the problem of uneven diffusion of process gases. The problem that the uniformity of the film is reduced and the uniformity of the film is not easy to adjust

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