A kind of rotary etching device and wet etching machine table

Abstract

The invention discloses a rotary etching device and a wet etching machine, which are suitable for a semiconductor wet etching process, comprising: a supporting structure, which provides a supporting surface for supporting a wafer to be etched; A predetermined distance is preset between the wafer and the support surface, and a plurality of gas nozzles are evenly distributed on the support surface facing the wafer to be etched; the temperature control heating device is connected to the gas pipeline of the gas nozzle on the edge to heat the gas The protective gas in the pipeline; the nozzle device is arranged above the support surface. The nozzle device includes a nozzle and a liquid delivery pipe. The nozzle is arranged on the side facing the support surface. The liquid delivery pipe is connected to the end of the nozzle facing away from the support surface. Beneficial effects: by adding a temperature control heating device to heat the protective gas, the edge temperature of the wafer is changed, thereby increasing the etching rate of the wafer, changing the uniformity of the wafer, and ensuring that the uniformity of the product is within the controllable safety and quality standards within, reducing the risk of scrapping.

Description

technical field [0001] The invention relates to the technical field of semiconductor wet etching technology, in particular to a rotary etching device and a wet etching machine. Background technique [0002] The chemical etching device uses the chemical etching method (also known as wet etching) to directly chemically etch the unprotected parts of the workpiece with a chemical solution. [0003] During the etching process of the rotary etching device of the wet etching machine, the wafer is in a state of high-speed rotation, and the chemical solution used for etching is evenly dispersed from the center of the wafer to the edge of the wafer. As the distance from the center of the circle increases, the chemical solution will gradually increase under the centrifugal force, and the content of the chemical solution spread in the unit area will gradually decrease, causing the etching rate of the chemical solution to decrease gradually with the increase of the radius. The swing of ...

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Problems solved by technology

[0003] During the etching process of the rotary etching device of the wet etching machine, the wafer is in a state of high-speed rotation, and the chemical solution used for etching is evenly dispersed from the center of the wafer to the edge of the wafer. As the distance from the center of the circle increases, the chemical solution will gradually increase under the centrifugal force, and the content of the chemical solution spread in the unit area will gradually decrease, causing the etching rate of the chemical solution to decrease gradually with the increase of the radius. The swing of the liquid delivery pipeline can make the chemical solution diffuse to the edge of the wafer, but the liquid delivery pipeline cannot swing to the extreme edge of the cavity, and the current maximum position is 90% of the wafer, which causes the edge of the wafer on the rotary etching device to The etch rate is low, resulting in poor uniformity of the entire wafer, and the thickness at the edge of the wafer makes the final wafer product etched unevenly, so that the uniformity of the entire wafer cannot be improved

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