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CMOS image sensor based on back electrode connection and preparation method thereof

An image sensor and back electrode technology, which is applied in the field of CMOS image sensor based on back electrode connection and its preparation, can solve the problems of limited spatial resolution, inability to realize pixel parallel signal processing, and the like

Active Publication Date: 2020-07-07
FUDAN UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

[0003] Relying on pixel parallel processing, planar CMOS image sensors can achieve a signal processing frame rate of 10,000 frames per second, but because each pixel in the plane requires many transistors for signal processing, the spatial resolution is limited, no more than 352×288 pixels
[0004] The sensor prepared by TSV technology does not have a processor for each pixel, but multiple pixels share the same processor. This working mode is similar to column parallel processing, and pixel parallel signal processing cannot be realized.

Method used

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  • CMOS image sensor based on back electrode connection and preparation method thereof
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[0048] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. It should be understood that the specific The examples are only used to explain the present invention, not to limit the present invention. The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0049] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical" and "horizontal" are based on the orientation or positional relation...

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Abstract

The invention discloses a novel CMOS image sensor based on back electrode connection and a preparation method thereof. A back electrode is used for vertically connecting a photoelectric detector and asignal processor, traditional 3D stacking based on a TSV technology is replaced, and an additional horizontal region does not need to be provided for the signal processor independently, so that a high-density 3D stacking structure is realized, each pixel owns an independent signal processor, and simultaneously, high space resolution and frame rate are realized.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a CMOS image sensor based on back electrode connection and a preparation method thereof. Background technique [0002] To meet the growing demands of high-reality video systems, the resolution and frame rate of image sensors continue to improve. Conventional complementary metal-oxide-semiconductor (CMOS) image sensors have both photodetectors and signal processors on the same plane, using column-parallel signal processing, where multiple pixels in each column share the signal processor when operating, which is detrimental to frame rates improvement. Pixel parallel signal processing enables each pixel to have an independent signal processor, and the planar CMOS image sensor increases the frame rate. [0003] Relying on pixel parallel processing, planar CMOS image sensors can achieve a signal processing frame rate of 10,000 frames per second, but because each pixel in the ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14636H01L27/14689
Inventor 张卫王天宇陈琳孙清清
Owner FUDAN UNIV