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Avalanche photodiode

A technology of avalanche optoelectronics and diodes, applied in circuits, electrical components, semiconductor devices, etc.

Inactive Publication Date: 2018-12-11
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, none of the above techniques changed the avalanche voltage of the device

Method used

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  • Avalanche photodiode
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  • Avalanche photodiode

Examples

Experimental program
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Embodiment 1

[0032] see figure 1 , an avalanche photodiode of the present invention, comprising a p-type GaN layer 1, a p-type Al 0.2 Ga 0.8 N layer 2, i-type Al 0.2 Ga 0.8 N first multiplication layer 3, insertion layer Al 0.35 Ga 0.65 N 4, i-type Al 0.45 Ga 0.55 N second multiplication layer 5, n-type Al 0.45 Ga 0.55 N charge layer 6, i-type Al 0.45 Ga 0.55 N absorption layer 7 and n-type Al 0.5 Ga 0.5 N layers are p-type GaN layer, p-type Al 0.2 Ga 0.8 N-layer, i-type Al 0.2 Ga 0.8 N first multiplication layer, insertion layer Al 0.35 Ga 0.65 N, i-type Al0.45 Ga 0.55 N second multiplication layer, n-type Al 0.45 Ga 0.55 N charge layer, i-type Al 0.45 Ga 0.55 N absorber layer and n-type Al 0.5 Ga 0.5 N layers.

[0033] Wherein, the p-type GaN layer 1 has a thickness of 60nm and a hole concentration of 5×10 17 cm -3 . The p-type GaN layer 1 is mainly used for the ohmic contact of the device. p-type Al 0.2 Ga 0.8 N-layer 2 has a thickness of 120nm and a hole ...

Embodiment 2

[0036] The structure of the avalanche photodiode of this embodiment is the same as that of Embodiment 1, except that the insertion layer Al 0.35 Ga 0.65 The n-type doping concentration of N is 5×10 17 cm -3 .

Embodiment 3

[0038] The structure of the avalanche photodiode of this embodiment is the same as that of Embodiment 1, except that the insertion layer Al 0.35 Ga 0.65 The n-type doping concentration of N is 1×10 18 cm -3 .

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Abstract

The invention relates to anavalanche photodiode including ap-type GaNlayerse, a p-type Al0. 2Ga0. 8N layer, a first multiplier layer, an insertion layer Al0.35Ga0.65N, a second multiplier layer, an n-type Al0. 45Ga0. 55N charge layer, an i-type Al0. 45Ga0. 55N absorption layer, and an n-type Al0.5Ga0. 5N layer arranged in sequence; wherein the first multiplier layer is i-type Al0. 2Ga0. 8N, the second multiplier layer is i-type Al0. 45Ga0. 55N, and the insertion layer is n-type Al0. 35Ga0. 65N; The thickness of the insertion layer is 20-80nm, the n-type doping concentration of the intercalation layer is 1 *1017 cm-3-1.5*1018cm-3. As that polarization effect between the multiply layers of different Al component material and the insertion layer parameters added between the multiply layers are controlled, the internal electric field distribution of the avalanche photodiode device is effectively controlled, and the device characteristics are controlled.

Description

technical field [0001] The invention relates to the field of photoelectric detection electronic devices, in particular to an avalanche photodiode. Background technique [0002] Ultraviolet detectors made of group III nitrides have been widely studied around 1990. At the beginning, ultraviolet detectors made of GaN materials were used, using photoconductive effects, but due to the constraints of dark current and response rate of the device , Schottky ultraviolet detectors using GaN and AlGaN materials and photodiodes with metal-semiconductor-metal structures have appeared. With the breakthrough of P-type doping of GaN materials, photodiodes based on GaN materials began to develop rapidly. Due to its advantages in dark current, response rate and detectability, ultraviolet photodiode arrays began to appear. In recent years, due to the advantages of III-V group semiconductor materials AlGaN and GaN, such as wide band gap, relatively stable physical and chemical properties, and ...

Claims

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Application Information

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IPC IPC(8): H01L31/107H01L31/0304
Inventor 陈俊章征宇
Owner SUZHOU UNIV