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A bias voltage modulation method, bias voltage modulation system and plasma processing equipment

A bias voltage modulation and negative bias technology, applied in circuits, discharge tubes, electrical components, etc., can solve the problems of reducing the attractive force of positive ions, reducing production capacity, and reducing the number and rate of positive ions reaching the surface of the wafer.

Active Publication Date: 2020-11-10
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The positive ions accumulated on the wafer surface generate a positive potential, which will reduce the negative bias voltage on the wafer surface, thereby reducing the attraction of the wafer surface to the positive ions in the plasma, reducing the number and rate of positive ions reaching the wafer surface, thereby Reduces the etch rate on the wafer surface, reducing throughput

Method used

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  • A bias voltage modulation method, bias voltage modulation system and plasma processing equipment
  • A bias voltage modulation method, bias voltage modulation system and plasma processing equipment
  • A bias voltage modulation method, bias voltage modulation system and plasma processing equipment

Examples

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Embodiment 1

[0051] This embodiment provides a method for modulating the bias voltage on the surface of the workpiece to be processed. The bias power generated by the bias RF source is loaded on the base carrying the workpiece to be processed, so that the surface of the workpiece placed on the base to be processed Generate a negative bias voltage. During the bias power loading period, the voltage generated by the bias RF source increases from the initial voltage to the target voltage to compensate for the negative bias voltage lost on the surface of the workpiece to be processed, so that the negative bias voltage on the surface of the workpiece to be processed is The preset range is maintained during bias power loading.

[0052] Among them, the preset range refers to that after the bias power is loaded on the surface of the workpiece to be processed, it can ensure that the positive ions reaching the surface of the workpiece to be processed have a certain amount and rate, thereby ensuring th...

Embodiment 2

[0075] This embodiment provides a bias modulation system, such as Figure 5 As shown, it is used to modulate the negative bias voltage of the workpiece to be processed placed on the surface of the base 10, including: a bias RF source 7, the bias RF source 7 is electrically connected to the base 10 carrying the workpiece to be processed, for A bias power is applied to the base 10 to generate a negative bias on the surface of the workpiece to be processed. The voltage adjustment module 9, the voltage adjustment module 9 is electrically connected to the bias RF source 7, and is used to increase the voltage generated by the bias RF source 7 from the initial voltage to the target voltage during bias power loading, so as to compensate the surface of the workpiece to be processed Loss of negative bias voltage, so that the negative bias voltage of the surface of the workpiece to be processed is kept within the preset range.

[0076] The voltage adjustment module 9 can make the increa...

Embodiment 3

[0086] This embodiment provides a plasma processing device, including a base for carrying workpieces to be processed, a plasma generating device, and the bias modulation system in Embodiment 2, where the bias modulation system is electrically connected to the base.

[0087] Wherein, the plasma generating device includes a coil and an upper electrode radio frequency source connected thereto, and the upper electrode radio frequency source is a continuous wave radio frequency source or a pulse modulation radio frequency source.

[0088] By adopting the bias voltage modulation system in Embodiment 2, the plasma processing equipment can reduce or avoid the loss of negative bias voltage on the surface of the workpiece to be processed, thereby reducing or avoiding the loss of plasma energy bombarded to the surface of the workpiece to be processed , so that the processing rate of the processed workpiece is kept within the preset range, on the one hand, the productivity of the processed...

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Abstract

The present invention provides a bias modulation method, a bias modulation system and a plasma processing device. The bias modulation method comprises: during loading of a bias power to a base for bearing a workpiece to be machined, increasing an output voltage of a bias radio frequency source, so that the output voltage increases to a target voltage value from an initial voltage value, and so that a negative bias produced on a surface of the workpiece to be machined is kept within a pre-set range during loading of the bias power to the base. Also disclosed is a bias modulation system. The plasma processing device disclosed comprises a bias modulation system provided in the present invention. The bias modulation method, the bias modulation system and the plasma processing device can all prevent the case of a negative bias appearing on the surface of a wafer decreasing during loading of a bias power to a base, so that not only the decrease in plasma processing speed can be avoided and productivity is ensured, but also the surface of a workpiece to be machined can be ensured to be sufficiently processed, enabling the electrical performance thereof to satisfy requirements.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a bias voltage modulation method, a bias voltage modulation system and plasma processing equipment. Background technique [0002] With the rapid development of the manufacturing process of semiconductor components, the requirements for the performance and integration of components are getting higher and higher, which makes plasma technology widely used. In the plasma etching or deposition system, by introducing various reactive gases (such as Cl 2 , SF 6 ,C 4 f 8 ,O 2 etc.), use an external electromagnetic field (DC or AC) to make the bound electrons in the gas atoms get rid of the potential well and become free electrons, and the free electrons that have gained kinetic energy collide with molecules, atoms or ions to completely dissociate the gas and form a plasma. Plasma contains a large number of active particles such as electrons, ions (including positive ions and negative i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/321H01J2237/3348H01J37/32
Inventor 苏恒毅韦刚
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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