Bias modulation method and system, and plasma processing equipment

Abstract

The invention provides a bias modulation method and system, and plasma processing equipment. The method is to load the bias power generated by a bias radio frequency source on a pedestal bearing a to-be-processed workpiece so that negative bias can be generated on the surface of the to-be-processed workpiece placed on the pedestal; and during the loading of the bias power, voltage generated by thebias radio frequency source can be increased to target voltage from initial voltage to compensate for the losing negative bias on the surface of the to-be-processed workpiece, so that the negative bias on the surface of the to-be-processed workpiece can be maintained in a preset range during the loading of the bias power. The bias modulation system is also disclosed. The disclosed plasma processing equipment includes the bias modulation system. The bias modulation method and system and the plasma processing equipment can maintain the negative bias on the surface of the to-be-processed workpiece in the preset range, so that the technology rate (such as etching rate or deposition rate) of the to-be-processed workpiece can be maintained in the preset range.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a bias voltage modulation method, a bias voltage modulation system and plasma processing equipment. Background technique [0002] With the rapid development of the manufacturing process of semiconductor components, the requirements for the performance and integration of components are getting higher and higher, which makes plasma technology widely used. In the plasma etching or deposition system, by introducing various reactive gases (such as Cl 2 ,SF 6 ,C 4 f 8 ,O 2 etc.), use an external electromagnetic field (DC or AC) to make the bound electrons in the gas atoms get rid of the potential well and become free electrons, and the free electrons that have gained kinetic energy collide with molecules, atoms or ions to completely dissociate the gas and form a plasma. Plasma contains a large number of active particles such as electrons, ions (including positive ions and negative io...

AI Technical Summary

Problems solved by technology

The positive ions accumulated on the wafer surface generate a positive potential, which will reduce the negative bias voltage on the wafer surface, thereby reducing the attraction of the wafer surface to the positive ions in the plasma, reducing the number and rate of positive ions reaching the wafer surface, thereby Reduces the etch rate on the wafer surface, reducing throughput

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