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Semiconductor device and forming method thereof

A semiconductor and mask layer technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, optics, etc.

Inactive Publication Date: 2019-01-15
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as semiconductor manufacturing processes have increasingly narrow process windows, the fabrication of these devices has approached or even exceeded the theoretical limits of lithography equipment

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

Examples

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Embodiment Construction

[0065] The following provides many different implementation methods or examples to implement different features of various embodiments. Specific elements and examples of their arrangement are described below to illustrate the present invention. Of course, these are only examples and should not be used to limit the scope of the present invention. For example, the size of the element is not limited to the disclosed range or value, but depends on the process conditions and / or the desired properties of the device. In addition, when the description mentions that the first element is formed on the second element, it may include an embodiment in which the first element is in direct contact with the second element, or it may include other elements formed on the first and An embodiment between the second element, where the first element and the second element are not in direct contact. For simplicity and clarity, various features can be drawn in different sizes at will.

[0066] In add...

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PUM

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Abstract

A semiconductor device forming method is provided. The method includes patterning a plurality of first mandrels over a first mask layer. The method further includes forming a first spacer layer on sidewalls and tops of the first mandrels. The method further includes removing horizontal portions of the first spacer layer, with remaining vertical portions of the first spacer layer forming first spacers. The method further includes, after removing the horizontal portions of the first spacer layer, depositing a reverse material between the first spacers. The method further includes patterning thefirst mask layer using the first spacers and the reverse material in combination as a first etching mask.

Description

Technical field [0001] The embodiment of the present invention relates to a method of forming a semiconductor device. Background technique [0002] As semiconductor devices continue to be down-scaling, various process technologies (such as lithography) are adapted to allow the fabrication of smaller and smaller devices. However, as semiconductor manufacturing processes have smaller and smaller process windows, the manufacturing of these devices has approached or even exceeded the theoretical limit of lithography equipment. As semiconductor devices continue to shrink, the required spacing (ie, pitch) between elements is smaller than the pitch that can be manufactured using conventional optical masks and lithography equipment. Summary of the invention [0003] According to some embodiments, the present invention provides a method for forming a semiconductor device, including: forming a first mask layer on a substrate; patterning a plurality of first spacers above the first mask lay...

Claims

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Application Information

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IPC IPC(8): H01L21/027H01L29/78H01L21/336
CPCH01L21/027H01L29/66477H01L29/7855H01L21/0337H01L21/3086H01L21/31144H01L21/76816H01L21/0274H01L21/76829H01L21/76865H01L21/0276H01L21/76802H01L21/3213G03F7/091H01L21/28035H01L21/28061
Inventor 黄冠维陈育裕
Owner TAIWAN SEMICON MFG CO LTD