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Rework method of integrated circuit manufacturing process

A manufacturing process and integrated circuit technology, which is applied in the rework field of integrated circuit manufacturing process, and can solve problems such as contamination of wet etching machines

Active Publication Date: 2021-01-29
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

like Figure 1C As shown, in the cleaning process of the DUO layer 102, the photoresist residue 103a will be cleaned into the wet etching machine, which will cause pollution of the wet etching machine

Method used

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  • Rework method of integrated circuit manufacturing process
  • Rework method of integrated circuit manufacturing process
  • Rework method of integrated circuit manufacturing process

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Experimental program
Comparison scheme
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Embodiment Construction

[0051] Such as figure 2 Shown is the flowchart of the rework method of the integrated circuit manufacturing process of the embodiment of the present invention; as Figure 3A to Figure 3D As shown, it is a device structure diagram in each step of the method of the embodiment of the present invention. The rework method of the integrated circuit manufacturing process of the embodiment of the present invention includes the following steps:

[0052] Step 1, such as Figure 3A As shown, a photoresist 3 is formed on a semiconductor substrate, and a first photolithography process is performed, and the first photolithography process includes a first exposure and a first development.

[0053] Before forming the photoresist 3 , a step of forming a layer of bottom anti-reflection coating 2 is also included, and the photoresist is coated on the bottom anti-reflection coating 2 .

[0054] In an embodiment of the present invention, an integrated circuit manufacturing process is used to fo...

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PUM

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Abstract

The invention discloses a rework method for an integrated circuit manufacturing process, comprising the steps of: step 1, forming photoresist on a semiconductor substrate, and performing a first photolithography process; step 2, performing detection after development, and detection after development When it exceeds the range, the following rework steps are performed: step 21, use a blank mask to conduct a second overall exposure to the photoresist; step 22, perform a second development to remove the photoresist for the first time; step 23, use a photoresist The resist reduction process dissolves the photoresist for the second time. The invention can increase the removal rate of the photoresist, can prevent the photoresist from remaining, and can eliminate the contamination of the photoresist residue on the subsequent wet etching machine.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing method, in particular to a rework method for the integrated circuit manufacturing process. Background technique [0002] An integrated manufacturing method of NMOS and PMOS with a high dielectric constant metal gate (HKMG). In the HKMG process, it is necessary to form a high dielectric constant (HK) gate dielectric layer and a metal gate at the same time, which is usually used in the existing HKMG process. In the post-metal gate process, it is usually necessary to use a dummy polysilicon gate, that is, a pseudo-polysilicon gate, to form the gate dielectric layer, channel region, and source-drain region of the device, and then perform metal The replacement of the gate is to remove the dummy polysilicon gate, and then fill the removed area of ​​the dummy polysilicon gate with metal to form a metal gate. [0003] In the existing metal gate last process, usually after the dummy poly...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F7/00
CPCG03F7/0035H01L21/0274
Inventor 余寅生王志宏赵弘文
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD