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Non-volatile memory devices and methods of fabricating the same

A non-volatile storage and device technology, applied in the field of non-volatile storage devices and manufacturing thereof, can solve problems such as complicated operation circuits and/or wirings

Pending Publication Date: 2019-03-05
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As memory cell sizes are reduced for high integration, operating circuits and / or wiring in memory devices for operation and electrical connection of memory devices are becoming more complex

Method used

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  • Non-volatile memory devices and methods of fabricating the same
  • Non-volatile memory devices and methods of fabricating the same
  • Non-volatile memory devices and methods of fabricating the same

Examples

Experimental program
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Embodiment Construction

[0024] figure 1 is a block diagram illustrating a memory device according to some example embodiments.

[0025] refer to figure 1 , the memory device 10 may include a memory cell array 50 and a peripheral circuit 60 . Although not shown, the memory device 10 may further include a data input / output circuit and / or an input / output interface.

[0026] The memory cell array 50 includes a plurality of memory cells, and may be connected to a string selection line SSL, a word line WL, a ground selection line GSL, and a bit line BL. Specifically, the memory cell array 50 may be connected to a row decoder 62 through a string selection line SSL, a word line WL, and a ground selection line GSL, and may be connected to a page buffer 63 through a bit line BL.

[0027] The plurality of memory cells included in the memory cell array 50 may be, for example, flash memory cells. Hereinafter, example embodiments will be described in detail with reference to a case where a plurality of memory ...

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PUM

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Abstract

A non-volatile memory device may include a first semiconductor layer including a peripheral region, the peripheral region including one or more peripheral transistors on a lower substrate. The non-volatile memory device may further include a second semiconductor layer on the peripheral region, the second semiconductor layer including an upper substrate, the second semiconductor layer further including a memory cell array on the upper substrate. The upper substrate may include a first upper substrate on the first semiconductor layer, a first layer on the first upper substrate, and a second upper substrate on the first layer.

Description

technical field [0001] The inventive concepts relate to memory devices, and more particularly, to nonvolatile memory devices and methods of manufacturing the same. Background technique [0002] Recently, with the multifunctionalization of data communication devices, there are demands for increased capacity and higher integration of memory devices. As memory cell sizes are reduced for high integration, operating circuits and / or wirings in memory devices for operation and electrical connection of the memory devices are becoming more complex. Accordingly, there is a need for a memory device having excellent electrical characteristics with increased integration. Contents of the invention [0003] Some example embodiments provide a nonvolatile memory including an upper substrate. [0004] According to some example embodiments, a nonvolatile memory device may include a first semiconductor layer and a second semiconductor layer. The first semiconductor layer may include a peri...

Claims

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Application Information

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IPC IPC(8): H01L27/11524H01L27/11529H01L27/1157H01L27/11573H01L27/11531
CPCH10B41/42H10B41/41H10B41/35H10B43/35H10B43/40G11C5/025G11C16/08G11C16/0483G11C11/5621H10B43/10H10B43/50H10B43/27H01L29/788H10B41/50H01L29/94H10B41/40H10B12/50H10B20/60H10B41/27
Inventor 尹东吉金灿镐郭判硕全哄秀
Owner SAMSUNG ELECTRONICS CO LTD