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Semiconductor device

A technology for semiconductors and devices, applied in the field of semiconductor devices, can solve the problems of low heat dissipation of insulating paste and reduced driveability of small spheres, and achieve the effect of improving heat dissipation

Inactive Publication Date: 2019-03-05
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this insulating paste has low heat dissipation due to its material properties, so when the small balls operate, heat fills the inside of the semiconductor device, and there is a problem that the driving performance of the small balls decreases.

Method used

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  • Semiconductor device
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Experimental program
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Effect test

no. 1 approach

[0145] according to Figure 1 to Figure 7 , the semiconductor device A10 according to the first embodiment of the present invention will be described. The semiconductor device A10 includes a semiconductor element 11 , a conductive layer 12 , a plurality of terminals 2 , a sealing resin 3 and a plurality of wires 4 .

[0146] exist figure 1 In , the sealing resin 3 is shown transparently for easy understanding. exist figure 2 In FIG. 2 , the internal conductive layer 28 (details will be described later) and the sealing resin 3 are shown transparently for easy understanding. exist figure 1 and figure 2 In , the external shape of the sealing resin 3 seen through is shown by a phantom line (two-dot chain line). represented by a dotted line figure 2 The passage position of the VI-VI line shown. Figure 8 The section position of Image 6 The location of the section is the same. In addition, in Figure 1 to Figure 7 In the illustrated plurality of terminals 2 , descript...

no. 2 approach

[0189] Below, according to Figure 19 ~ Figure 23 , the semiconductor device A20 according to the second embodiment of the present invention will be described. In these figures, the same reference numerals are assigned to the same or similar components as those of the semiconductor device A10 described above, and overlapping descriptions will be omitted. Here, for ease of understanding, in Figure 19 In , the inner conductive layer 28 and the sealing resin 3 are shown transparently. exist Figure 19 In , the external shape of the sealing resin 3 seen through is shown by a phantom line. represented by a dotted line Figure 19 The passing position of line XXIII-XXIII shown. In addition, in figure 1 9~ Figure 23 In , the reference numerals of the same constituent elements that overlap are omitted for the plurality of terminals 2 .

[0190] The structures of the plurality of terminals 2 and the sealing resin 3 of the semiconductor device A20 are different from those of t...

no. 3 approach

[0196] according to Figure 24 ~ Figure 26 , the semiconductor device A30 according to the third embodiment of the present invention will be described. In these figures, the same reference numerals are assigned to the same or similar components as those of the semiconductor device A10 described above, and overlapping descriptions will be omitted. Here, for ease of understanding, in Figure 24 In , the inner conductive layer 28 and the sealing resin 3 are shown transparently. exist Figure 24 In , the external shape of the sealing resin 3 seen through is shown by a phantom line. Figure 26 is an enlarged cross-sectional view of the semiconductor device A30, and its cross-sectional position is the same as Figure 7 The location of the section is the same. In addition, in Figure 24 and Figure 25 In , the reference numerals of the same constituent elements that overlap are omitted for the plurality of terminals 2 .

[0197] The structure of the conductive layer 12 of the...

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PUM

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Abstract

The invention provides a semiconductor device. The semiconductor device includes a semiconductor element, a conductive layer, terminals, and a sealing resin. The conductive layer, containing metal particles, is in contact with the reverse surface and the side surface of the semiconductor element. The terminals are spaced apart from and electrically connected to the semiconductor element. The sealing resin covers the semiconductor element. The conductive layer has an edge located outside of the semiconductor element as viewed in plan. Each terminal includes a top surface, a bottom surface, an inner side surface held in contact with the sealing resin, and the terminal is formed with a dent portion recessed from the bottom surface and the inner side surface. The conductive layer and the bottom surface of each terminal are exposed from a bottom surface of the sealing resin. The semiconductor device can be made low and can further improve heat dissipation.

Description

technical field [0001] The present invention relates to a semiconductor device in which the semiconductor element is a Hall element. Background technique [0002] The semiconductor element is a semiconductor device that is a Hall element and is used in various electronic devices such as mobile phones. For example, when controlling a light source of a display screen of a mobile phone, the semiconductor device can be used to control the light source to be turned on or off by a switch of the main body of the mobile phone. As electronic equipment using the semiconductor device becomes thinner, the semiconductor device is also required to be further downsized. [0003] Patent Document 1 discloses an example of a semiconductor device provided with a back magnet (pellet) (semiconductor element) as a Hall element. In this semiconductor device, a structure in which the insulating layer is in close contact with the back surface of the magnetic back and exposed from the back surface ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H10N52/00H10N52/80H10N52/01
CPCH10N52/101H01L23/49513H01L23/49548H01L23/49582H01L2224/04042H01L2224/97H01L2924/1815H01L2924/18165H01L23/3107G01R33/07H01L23/49541H01L2224/85005H01L2224/48101H01L2224/48177H01L2224/48465H01L24/05H01L24/85H01L24/48H01L24/45H01L2224/48471H01L2224/48091H01L2224/48096H01L2224/48097H01L2224/85464H01L2224/05644H01L2224/05166H01L2224/85439H01L2224/45144H01L2224/05144H01L2224/05117H01L2224/29199H01L2224/29339H01L2224/85444H01L2224/05155H10N52/80H10N52/01H01L23/544H01L2224/85H01L2924/00014H01L2924/013H01L2924/01028H01L2924/01032H01L2924/01079H01L21/4828H01L21/565H01L21/568H01L21/6835H01L23/3121H01L2221/68345H01L2224/04026H01L2224/05573H01L2224/48106H01L2224/48644H01L2924/10329
Inventor 长谷川裕也木越圣博
Owner ROHM CO LTD
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