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Semiconductor structures including memory materials substantially encapsulated with dielectric materials, and related systems and methods

A technology of dielectric material and storage material, which is applied to the storage device including this unit, forms the semiconductor structure and storage unit field, and can solve the problems of side wall contamination and damage

Active Publication Date: 2019-03-05
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Thus, patterning the stack structure and associated memory elements may lead to undesired effects such as damage and contamination of the sidewalls of the patterned stack structure

Method used

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  • Semiconductor structures including memory materials substantially encapsulated with dielectric materials, and related systems and methods
  • Semiconductor structures including memory materials substantially encapsulated with dielectric materials, and related systems and methods
  • Semiconductor structures including memory materials substantially encapsulated with dielectric materials, and related systems and methods

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Embodiment Construction

[0023] The illustrations contained herein are not meant to be actual views of any particular system or semiconductor structure, but are merely idealized representations used to describe the embodiments herein. Elements and features that are common to the figures may retain the same numerical designation, except that for ease of following the description, in most cases a reference number begins with the number of the figure that introduces or most fully describes the element.

[0024] The following description provides specific details, such as material types, material thicknesses, and processing conditions, in order to provide a thorough description of the embodiments described herein. However, it will be understood by those skilled in the art that the embodiments disclosed herein may be practiced without the use of these specific details. Indeed, the embodiments may be practiced in conjunction with conventional fabrication techniques employed in the semiconductor industry. A...

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Abstract

The application relates to semiconductor structures including memory materials substantially encapsulated with dielectric materials, and related systems and methods. A semiconductor structure includesstack structures. Each of the stack structures comprises a first conductive material, a chalcogenide material over the first conductive material, a second conductive material over the chalcogenide material, and a first dielectric material between the chalcogenide material and the first conductive material and between the chalcogenide material and the second conductive material. The semiconductorstructure further comprises a second dielectric material on at least sidewalls of the chalcogenide material. The chalcogenide material may be substantially encapsulated by one or more dielectric materials. Related semiconductor structures and related methods are disclosed.

Description

[0001] priority claim [0002] The application claimed on August 30, 2017 for "semiconductor structures including storage materials substantially encapsulated with dielectric materials and related systems and methods (SEMICONDUCTOR STRUCTURES INCLUDING MEMORY MATERIALSSUBSTANTIALLY ENCAPSULATED WITH DIELECTRIC MATERIALS, AND RELATED SYSTEMS ANDMETHODS)" The benefit of the filing date of filed U.S. Patent Application Serial No. 15 / 692,387. technical field [0003] Embodiments disclosed herein relate to semiconductor structures comprising memory material substantially encapsulated by one or more dielectric materials, to associated memory cells, and to methods of forming such semiconductor structures and memory cells. More particularly, embodiments of the invention relate to semiconductor structures and memory cells comprising memory material substantially encapsulated with an alumina dielectric material, to methods of forming such semiconductor structures and memory cells, to m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/00H10N70/231H10N70/011H10B63/80H10N70/801H10N70/826H10N70/8828H10N70/8825H10N70/063H10N70/882H10N70/021
Inventor P·凡蒂尼A·皮罗瓦诺
Owner MICRON TECH INC