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A method to avoid falling of single crystal silicon rod during crystal pulling

A single crystal silicon rod and crystal rod technology, which is applied in the field of Czochralski single crystal production of single crystal silicon, can solve problems such as crystal rod fracture and single crystal silicon rod falling, and achieve the effect of preventing falling

Active Publication Date: 2021-07-13
YINCHUAN LONGI SILICON MATERIALS
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for avoiding the falling of the single crystal silicon rod during the crystal pulling process, which solves the problem that the existing single crystal silicon rod is easily broken due to dislocation during pulling

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  • A method to avoid falling of single crystal silicon rod during crystal pulling

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Embodiment Construction

[0016] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0017] The present invention provides a method for avoiding the falling of single crystal silicon rods in the crystal pulling process, using a clamping device to complete the auxiliary clamping of single crystal silicon rods, the structure of the clamping device is as follows figure 1 As shown, it includes a clamp disc 1 connected to the upper part of the weight 5. The two ends of the clamp disc 1 are connected with clamp arms 4 through pins 2. The clamp disc 1 and two clamp arms 4 form a shuttle-shaped cavity. Each clamp arm 4 There is a clamp arm inflection point 7, and the distance between the clamp arm inflection points 7 of the two clamp arms 4 is the farthest. The bottom moves upward along the shuttle-shaped cavity, and the hammer ejector rod 8 is in contact with the inner wall of the shuttle-shaped cavity. The upper outer surface of th...

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Abstract

The invention discloses a method for avoiding the drop of a single crystal silicon rod in the crystal pulling process, which comprises the steps of: first drawing a section of thin neck with a seed crystal, and then carrying out the operation of putting the shoulder, turning the shoulder, and equal diameter in sequence, and then raising the Seed crystal rising speed to carry out necking operation, and finally repeat shoulder, shoulder, equal diameter operations to complete the drawing of single crystal ingot, wherein, after the necking operation and the second shouldering operation, the neck is formed on the ingot, and the clamp is used The clamping device clamps the neck to assist in clamping the ingot to prevent it from falling.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon production by a Czochralski single crystal method, and in particular relates to a method for avoiding the drop of a single crystal silicon rod during the crystal pulling process. Background technique [0002] In the process of producing monocrystalline silicon by the Czochralski method, the brief process is to put the raw silicon material into the quartz crucible in the single crystal furnace, seal the furnace body and then pass in the protective gas, and heat the material block to Melting at about 1400°C, the crystal pulling process is completed through operations such as seeding, shoulder laying, shoulder turning, equal diameter, and finishing. [0003] The seed crystals are all prepared from dislocation-free silicon single crystals. When the seed crystals are inserted into the melt, dislocations will be generated due to the thermal stress and surface tension caused by the temper...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 杨东梁永生冉瑞应李迎春金雪李博一
Owner YINCHUAN LONGI SILICON MATERIALS
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