Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device

A technology of semiconductor and conductive sheet, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., and can solve problems such as breakdown

Active Publication Date: 2019-03-26
KIOXIA CORP
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Conventional flip-chip mounted semiconductor devices are prone to ESD (Electro-Static Discharge, electrostatic discharge) breakdown caused by sta

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0018] There are various examples of semiconductor devices using flip chip mounting. Here, an SSD will be described as an example. figure 1 It is a block circuit diagram showing an example of the configuration of the SSD of the embodiment. Such as figure 1 As shown, the SSD 10 includes a controller 20, flash memories 32-1, 32-2 (sometimes referred to as 32) as non-volatile semiconductor memories, DRAM (Dynamic Random Access Memory, dynamic random access memory) 54, power supply Circuit 58, host interface (host I / F) 52, etc.

[0019] An external device 50 as a host device is connected to the host I / F 52. The external device 50 performs writing and reading of data in the flash memory 32. The external device 50 includes, for example, a personal computer or a CPU (Central Processing Unit) core. As the interface with the external device 50, for example, PCI Express (registered trademark), SAS (Serial Attached SCSI) (registered trademark), SATA (Serial Advanced Technology Attachment)...

no. 2 Embodiment approach

[0056] Figure 5 It is a plan view showing an example of the external appearance of the SSD 10A of the second embodiment, Image 6 It is a cross-sectional view showing an example of a cross-sectional structure near the controller of the second embodiment.

[0057] The SSD 10A of the second embodiment differs from the SSD 10 of the first embodiment only in that the nameplate label 62 is attached. Usually, a nameplate label describing the model name or serial number is attached to the SSD. In the second embodiment, the nameplate label 62 is made of a conductive material, such as Figure 5 As shown, it is attached so as to cover the DRAM chip 54, the semiconductor package 16, and the memory chips 32-1, 32-2. So like Image 6 As shown, the nameplate label 62 covers the insulating layer 22 of the semiconductor package 16 constituting the controller, and covers the exposed portion 39 exposed from the insulating layer 22. Therefore, the nameplate label 62 and the exposed portion 39 are...

no. 3 Embodiment approach

[0061] Figure 7 An example of the ground connection of the SSD of the third embodiment is shown. According to the first and second embodiments, the charge flowing in the insulating layer 22 flows into the ground layer 42 of the SSD 10 via the exposed portions 39a, 39b, 39c, 39d, and the second through holes 38a, 38b, 38c, and 38d. The ground layer 42 of the SSD 10 is also connected to the ground terminal of the mounted chip other than the controller 20. Therefore, if the controller 20 causes the electric charge generated by static electricity to flow into the ground layer 42, the ground of other mounted chips connected to the ground layer 42 also becomes a high potential instantaneously, which may cause breakdown of other mounted chips. Similarly, the ground layer 42 instantaneously becomes a high potential due to potential fluctuations of other mounted chips, and the second through holes 38a, 38b, 38c, and 38d of the controller 20 become high potentials, and the controller 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An embodiment of the invention provides a semiconductor device which realizes no easy ESD breakdown. According to one embodiment, the semiconductor device includes a first board including a pluralityof terminals, a semiconductor chip flip-chip mounted to the first board, and an insulating layer covering the first board and the semiconductor chip. The plurality of terminals include at least one first terminal electrically connected to the semiconductor chip, and at least one second terminal that is not connected to the semiconductor chip, wherein the at least one second terminal is not coveredby the insulating layer.

Description

[0001] [Related Application] [0002] This application has priority based on Japanese Patent Application No. 2017-179056 (application date: September 19, 2017). This application includes all the contents of the basic application by referring to the basic application. Technical field [0003] The embodiment of the present invention relates to a semiconductor device. Background technique [0004] As a mass storage device, in recent years, SSD (Solid State Drive) has been developed instead of HDD (Hard Disk Drive). SSD includes non-volatile semiconductor memory such as NAND (Not AND) flash memory and its controller. The controller includes a semiconductor chip and a chip substrate, and the semiconductor chip is mounted on the chip substrate by wire bonding. The chip substrate is mounted on the SSD substrate together with the flash memory. [0005] In recent years, instead of wire bonding, flip chip mounting technology has been developed. In the controller, semiconductor chips are als...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/31H01L23/498
CPCH01L23/3121H01L23/49811H01L2224/131H01L2224/16235H01L2224/32225H01L2224/73204H01L2224/92125H01L2924/15311H01L2924/3511H01L2223/54486H01L23/3128H01L2223/54433H01L23/544H01L24/16H01L23/49827H01L23/49816H01L23/49833H05K3/284H05K1/141H05K2201/10674H05K2201/10159H05K1/117H05K3/3436H01L2924/013H01L2924/00014H01L2224/16225H01L2924/00H01L23/49838H01L25/0655
Inventor 足利宽木村直树
Owner KIOXIA CORP