Semiconductor chip and manufacturing method thereof

Abstract

The invention discloses a semiconductor chip and a manufacturing method thereof. The semiconductor chip comprises a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent conductive layer, an insulating layer, an N-type electrode and a P-type electrode which are successively stacked, wherein the cross-sectional dimension of at least one of a columnof N-type electrode connection pins of the N-type electrode is different from those of other N-type electrode connection pins; and the cross-sectional dimension of at least one of a column of P-type electrode connection pins of the P-type electrode is different from those of other P-type electrode connection pins. In this way, the current injected by the N-type electrode and the P-type electrode can be uniformly distributed on the semiconductor chip, thereby improving the problem of current spreading dead angle to improve the luminous efficiency of the semiconductor chip.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor chip and a manufacturing method thereof. Background technique [0002] The light-emitting principle of the semiconductor chip of a light-emitting diode (Light Emitting Diode, LED) is to use the energy difference between the N-type semiconductor layer and the P-type semiconductor layer to release energy in the form of light to emit light. Therefore, the light-emitting diode is called a cold light source. . In addition, light-emitting diodes have the advantages of high durability, long life, light weight, and low power consumption. Therefore, today's lighting market places high hopes on light-emitting diodes and regards them as a new generation of lighting tools. [0003] The luminous efficiency of the semiconductor chip of the light-emitting diode is limited by the current spreading effect. In the semiconductor chip structure, due to the poor conductivity of the P-ty...

AI Technical Summary

Problems solved by technology

However, the current method of expanding the P-type semiconductor layer by using the transparent conductive layer in the existing semiconductor chip still has relatively large defects. Due to the limited conductivity of the transparent conductive layer, the closer to the edge of the semiconductor chip, the larger the current expansion due to the limited electrical conductivity of the transparent conductive layer. The more difficult it is, the more prone to the problem of current expansion dead angle, which will lead to uneven light emission of the semiconductor chip, and the bad phenomenon that the brightness at the edge of the semiconductor chip is dark and the brightness in the middle of the semiconductor chip is bright.

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