Substrate processing apparatus and method

Abstract

The present invention relates to a substrate processing apparatus comprising a polishing pad for polishing a polishing layer of a substrate, a temperature measurement unit for measuring temperature information of the polishing pad, and a control unit for controlling the polishing end time point of the substrate based on the temperature information of the polishing pad, By means of this, the advantageous effects of accurately controlling the grinding thickness of the substrate and improving the grinding efficiency can be obtained.

Description

technical field [0001] The present invention relates to a substrate processing device and method, more specifically, to a substrate processing device and method capable of accurately controlling the grinding thickness of a substrate and improving grinding efficiency. Background technique [0002] In general, a chemical mechanical polishing (CMP) process is a process in which a substrate such as a wafer is rotated in contact with a rotating grinding disc and mechanically polished to flatten the surface of the substrate to a predetermined thickness. [0003] For this, as figure 1 and figure 2 As shown, the chemical mechanical polishing apparatus 1 rotates itself while covering the polishing pad 11 on the polishing disc 10, and uses the carrier head 20 to press the substrate W on the surface of the polishing pad 11 and rotate it to polish the wafer flatly. W's surface. For this purpose, a regulator 30 is provided, which performs a revolving movement so that the surface of t...

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Problems solved by technology

[0009] However, the torque of the carrier head 20 varies not only due to the material of the polishing layer of the substrate W but also due to various factors such as the pressure applied to the substrate. Therefore, there is a torque variation due to the carrier head 20, and it is difficult to accurately determine The problem of the end time of substrate W grinding

Especially in a short period of time, it is very difficult to measure the torque change of the carrier head 20 and determine the finishing time of the polishing of the substrate W based on the measurement results.

[0010] For this reason, although various efforts have been made recently to accurately detect the polished thickness of the substrate and accurately control the timing at which the polishing is completed, it is far from enough, and development of this is required.

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