Substrate processing equipment

Abstract

The invention relates to a substrate processing device, which includes: a polishing pad for polishing a polishing layer of a substrate; a carrier head having a diaphragm in contact with the upper surface of the substrate, and pressing the substrate against the polishing pad.

Description

technical field [0001] The present invention relates to a substrate processing device, more specifically, to a substrate processing device capable of accurately controlling the grinding thickness of a substrate and improving grinding efficiency. Background technique [0002] In general, a chemical mechanical polishing (CMP) process is a process in which a substrate such as a wafer is rotated in contact with a rotating grinding disc and mechanically polished to flatten the surface of the substrate to a predetermined thickness. [0003] For this, as figure 1 and figure 2 As shown, the chemical mechanical polishing apparatus 1 is rotated while the polishing pad 11 is covered on the polishing disk 10, and the substrate W is pressed against the surface of the polishing pad 11 by the carrier head 20 and rotated to polish the wafer flatly. W's surface. For this purpose, a regulator 30 is provided, which performs a swivel movement so that the surface of the polishing pad 11 rema...

AI Technical Summary

Problems solved by technology

[0009] However, the torque variation of the carrier head 20 is caused not only by the polishing layer material of the substrate W but also by various factors such as the pressure applied to the substrate. The problem of the end time of W grinding

Especially in a short period of time, it is very difficult to measure the torque change of the carrier head 20 and determine the finishing time of the polishing of the substrate W based on the measurement results.

[0010] For this reason, although various attempts have been made recently to accurately detect the polished thickness of the substrate and accurately control the timing at which the polishing is completed, it is far from enough, and the development of this is required.

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