Display substrate, manufacturing method thereof and display device

A technology for a display substrate and a manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., and can solve problems such as poor threshold voltage uniformity
CN109728003AActive Publication Date: 2019-05-07HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD
Publication Date
2019-05-07

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Abstract

The invention provides a display substrate, a manufacturing method thereof and a display device, and belongs to the technical field of display; and the problem that a top gate type organic oxygen compound semiconductor film transistor in a present display substrate is low in uniformity of threshold voltage can be solved partially. In the display substrate, a first active layer comprises a first part overlapped with a first gate, a second active layer comprises a second part overlapped with a second gate, an orthographic projection of the first part in the substrate is positioned within an orthographic projection of a light shield layer in the substrate, and an orthographic projection of the second part in the substrate is not overlapped with the orthographic projection of the light shieldlayer in the substrate; and a multiplier of the majority carrier concentration of the first part and the thickness of the first part is lower than that of the concentration of the second part and thethickness of the second part.
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Description

technical field

[0001] The invention belongs to the field of display technology, and in particular relates to a display substrate, a display device and a manufacturing method of the display substrate. Background technique

[0002] For thin film transistors in display substrates, it has been reported that an oxide semiconductor is used as an active layer. Since top-gate thin film transistors have better performance than bottom-gate thin film transistors, such as smaller parasitic capacitance and smaller size, more and more attention has been paid to their application in display substrates.

[0003] In the above display substrate, some of the thin film transistors are used as driving transistors, and some of the thin film transistors are used as switching transistors. Relatively speaking, the stability of the characteristics of the driving transistor is required to be higher, so a blocking layer is formed between the driving transistor and the substrate to prevent external li...

Claims

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