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Temperature measurement device and method

A technology of temperature measurement and output detection, which is applied in the direction of measuring devices, measuring heat, thermometers, etc., and can solve problems such as poor sensing accuracy

Pending Publication Date: 2019-06-07
SHENZHEN SITAN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] Most of the existing diode temperature sensors are silicon-based diodes. The specific processes are bulk silicon (bulk silicon) process and SOI (Silicon on Insulator, that is, the silicon transistor structure is on the insulator) process. The temperature sensing range of the bulk silicon process is The temperature sensing range of the SOI process is -55°C to 150°C, and the temperature sensing range of the SOI process is -55°C to 200°C, and it shows poor sensing accuracy outside this range

Method used

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Embodiment Construction

[0033] The present invention will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for ease of description, the drawings only show a part but not all of the structure related to the present invention.

[0034] figure 1 Shown is a schematic structural diagram of a temperature measuring device provided by an embodiment of the present invention. reference figure 1 The temperature measuring device includes a constant current circuit 10, a Micro-LED 20 and a voltage detection circuit 30; the constant current circuit 10 is electrically connected to the Micro-LED 20 for inputting a constant first current to the Micro-LED 20, wherein the first current is less than The current threshold of the Micro-LED 20 when it emits light; the voltage detection circuit 30 is e...

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Abstract

Embodiments of the invention disclose a temperature measurement device and method. The temperature measurement device comprises a constant-current circuit, a Micro-LED and a voltage detection circuit,wherein the constant-current circuit is electrically connected with the Micro-LED and is used for inputting constant first current to the Micro-LED; the first current is smaller than a current threshold during the light emission of the Micro-LED; and the voltage detection circuit is electrically connected with the Micro-LED and is sued for measuring voltage between two electrodes of the Micro-LEDand outputting a detection temperature. The temperature measurement device and method are capable of solving temperature measurement problems and realizing rapid and high-precision temperature measurement.

Description

Technical field [0001] The embodiment of the present invention relates to temperature measurement technology, in particular to a temperature measurement device and a measurement method. Background technique [0002] Most variables measured in scientific research or engineering applications depend to varying degrees on temperature, one of the most common and important physical quantities. Therefore, temperature sensing is also particularly important. [0003] Existing diode temperature sensors are mostly silicon-based diodes, and the specific processes are bulk silicon (bulk silicon) process and SOI (Silicon on Insulator, that is, the silicon transistor structure is on the insulator) process. The temperature sensing interval of the bulk silicon process It is -55℃~150℃, the temperature sensing range of SOI process is -55℃~200℃, outside this range it shows very poor sensing accuracy. Summary of the invention [0004] The embodiment of the present invention provides a temperature measu...

Claims

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Application Information

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IPC IPC(8): G01K7/01
Inventor 刘召军刘弈镈张珂闫思吴
Owner SHENZHEN SITAN TECH CO LTD
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