Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as low breakdown voltage, and achieve the effects of reducing distance, increasing off-state source-drain breakdown voltage, and optimizing layout area

Active Publication Date: 2022-08-09
YANGTZE MEMORY TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a semiconductor device and its forming method, which are used to solve the problem of low source-drain breakdown voltage of existing MOS devices, so as to improve the electrical performance of three-dimensional memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] The specific embodiments of the semiconductor device and the method for forming the same provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0051] With the further development of 3D NAND memory technology to QLC (Quad-Level Cell, four-layer memory cell), how to further improve the off-state source-drain breakdown voltage of CMOS high-voltage devices without expanding the chip area is the design of current high-voltage devices. an important direction.

[0052] At present, the drift region is mainly formed in DEMOS (Drain-Extension MOS, Drain Extended Metal Oxide Semiconductor) and LDMOS (Lateral Double Diffused MOS, Lateral Double Diffused Metal Oxide Semiconductor) high-voltage devices to improve the off-state source of the device. leakage breakdown voltage.

[0053] However, in the current DEMOS high-voltage device, since the carrier movement is relatively close to the substrate surface of the source regi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
depthaaaaaaaaaa
Login to View More

Abstract

The invention involves semiconductor manufacturing technology, especially a semiconductor device and its formation method.The semiconductor device includes: substrate; grid layer, located on the surface of the substrate; the substrate has the source of the roof length in the direction of the corpus polar layer.The zone, the leaky drift area includes the drain region and the insulation isolation area between the drain region and the channel, the depth of the insulating isolation area is less than or equal to the depth of the drain region.While the invention increases the breakdown voltage of the semiconductor device, it optimizes the device layout area and enables the semiconductor device to maintain the original layout size.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a semiconductor device and a method for forming the same. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered by planar flash memory and pursue lower production cost per unit memory cell, various three-dimensional (3D) flash memory structures have emerged, such as 3D NOR (3D or non) flash memory and 3D NAND (3D and not) flash memory. [0003] Among them, 3D NAND memory is based on its small size and large capacity, and the high integration of storage cells using three-dimensional mode layer-by-layer stac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/08H01L29/06H01L29/78H01L21/336
Inventor 王剑屏董洁琼
Owner YANGTZE MEMORY TECH CO LTD