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Pressure sensor

A pressure sensor and base technology, applied in the field of sensors, can solve the problems of poor corrosion resistance, large volume and reduced product applicability, etc.

Pending Publication Date: 2019-06-14
CHARODEN IND TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most pressure sensors use oil-filled media to isolate the measured pressure from the sensitive structure. This isolation structure requires a large volume and poor corrosion resistance, and is not suitable for small space test environments, thereby reducing the applicability of the product.

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Embodiment Construction

[0025] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0026] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0027] Refer below figure 1 A pressure sensor according to some embodiments of the invention is described.

[0028] In the embodiment of the present invention, such as figure 1 As shown, the prese...

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Abstract

The invention provides a pressure sensor, which comprises a lining board, a glass foundation bed, a chip, a silicon substrate, a pressing groove, a silicon elastic film, electrodes, pins and glass slurry, wherein the glass substrate is arranged on the lining board; the chip is embedded into the upper wall of the glass foundation bed; the silicon substrate is arranged on the top of the glass foundation bed; the pressing groove is arranged on the upper wall surface of the silicon substrate, and the pressing groove is sunken to the bottom of the silicon substrate; the silicon elastic film is attached to the inner wall of the pressing groove; the electrodes and the chip are electrically connected, and the electrodes are embedded into the upper wall surface of the glass substrate; the pins andthe electrodes are connected, and the pins penetrate through the foundation bed and the lining board; and the glass slurry is embedded into the glass foundation bed, and the glass slurry covers the outer sides of the electrodes and the pins. Pin holes are processed on the corresponding positions of the glass foundation bed and the electrodes, the pins and the electrodes are connected, the pins penetrate through the glass foundation bed and the lining board, and therefore, a required space for the horizontal direction of the chip is reduced.

Description

technical field [0001] The present invention relates to the technical field of sensors, in particular to a pressure sensor. Background technique [0002] At present, in related technologies, in the field of micro-miniature silicon high-temperature pressure sensors, SOI wafer material has become the material of choice for making high-temperature devices due to its excellent high-temperature characteristics. Sensitivity and linearity are important performance indicators of pressure sensors. Different packaging structures It has a great influence on the performance of the sensor. Most pressure sensors use oil-filled media to isolate the measured pressure from the sensitive structure. This isolation structure requires a large volume and poor corrosion resistance, and is not suitable for small space test environments, thereby reducing the applicability of the product. Contents of the invention [0003] The present invention aims to solve at least one of the technical problems ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/00G01L9/00
Inventor 夏前明罗丽娟夏雪梅董海坤刘功源
Owner CHARODEN IND TECH (SHANGHAI) CO LTD
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