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Three-dimensional memory and manufacturing method thereof

A manufacturing method and memory technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of increasing the difficulty of stacking structures, high process costs, and low production efficiency, so as to reduce scrap, reduce process difficulty, and improve quality effect

Active Publication Date: 2019-06-18
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous increase of integration and three-dimensional memory storage capacity, the number of layers of the stacked structure fabricated on the substrate continues to increase, which increases the difficulty of etching the stacked structure, resulting in high process cost and low production efficiency. The problem

Method used

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  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof

Examples

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example 1

[0095] A three-dimensional memory is prepared by forming a polysilicon barrier layer in a first through hole, and forming a second through hole in a second stacked structure formed on the first stacked structure, combined below Figure 3 to Figure 6 A manufacturing method of a three-dimensional memory is introduced, the manufacturing method comprising:

[0096] On the semiconductor substrate, forming a first through hole 11 penetrating through the first stack structure;

[0097] depositing a first dielectric 30 on the surface of the first stack structure and in the first through hole;

[0098] removing the first dielectric deposited on the surface of the first stack structure, and forming a second dielectric layer 22 and a third dielectric layer 23 sequentially stacked on the surface of the first stack structure to form a second stack structure 20;

[0099] forming a second through hole 21 penetrating through the second stack structure;

[0100] After the second through hole...

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Abstract

An embodiment of the invention discloses a three-dimensional memory and a manufacturing method thereof. The manufacturing method comprises the following steps of forming a first through hole penetrating a first stacked structure; forming a sacrificial layer on the surface of the first stacked structure and in the first through hole; forming a first dielectric layer on the surface of the sacrificial layer; forming a second stacked structure on the surface of the first dielectric layer; forming a second through hole penetrating the second stacked structure, wherein the second through hole is communicated with the first through hole; and after the second through hole is formed, removing the first dielectric layer and the sacrificial layer in the first through hole.

Description

technical field [0001] Embodiments of the present invention relate to the field of integrated circuits, in particular to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] In the integrated circuit industry, memory cells perpendicular to the substrate are formed by etching deposited stacked structures to prepare three-dimensional memory, and memory cells can be formed on a smaller area. With the continuous increase of integration and three-dimensional memory storage capacity, the number of layers of the stacked structure fabricated on the substrate continues to increase, which increases the difficulty of etching the stacked structure, resulting in high process cost and low production efficiency. The problem. Contents of the invention [0003] In view of this, an embodiment of the present invention provides a three-dimensional memory and a manufacturing method thereof. [0004] The first aspect of the embodiments of the present in...

Claims

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Application Information

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IPC IPC(8): H01L27/11578
Inventor 周玉婷许健
Owner YANGTZE MEMORY TECH CO LTD