Method and system for evaluating heat dissipation characteristic of radio frequency power LDMOS device

A radio frequency power and device technology, applied in the field of electronic component testing, can solve the problems of the first method being complicated and not very practical, and achieve the effect of improving convenience and simplicity, simple design and clear principle.

Active Publication Date: 2019-06-21
北京顿思集成电路设计有限责任公司
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  • Application Information

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Problems solved by technology

[0006] Among them, the first method is more complicated and not very practical, while the second method requires a lo

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  • Method and system for evaluating heat dissipation characteristic of radio frequency power LDMOS device
  • Method and system for evaluating heat dissipation characteristic of radio frequency power LDMOS device
  • Method and system for evaluating heat dissipation characteristic of radio frequency power LDMOS device

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Embodiment Construction

[0049] In order to illustrate the present invention more clearly, the present invention will be further described below in conjunction with preferred embodiments and accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. Those skilled in the art should understand that the content specifically described below is illustrative rather than restrictive, and should not limit the protection scope of the present invention.

[0050] figure 1 A flowchart showing a method for evaluating the heat dissipation characteristics of a radio frequency power LDMOS device proposed by an embodiment of the present invention, such as figure 1 As shown, the method includes:

[0051] S100, testing the LDMOS device to be tested by the transmission line pulse testing device to obtain an IV test curve;

[0052] S200. Perform linear fitting on the rising portion of the IV test curve to obtain the parasitic resistance value of the LDMOS device to be tested;

[00...

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Abstract

The invention discloses a method for evaluating the heat dissipation characteristic of a radio frequency power LDMOS device. The method comprises the following steps: testing the LDMOS device to be tested by using a transmission line pulse testing device to obtain an IV testing curve; carrying out linear fitting on the rising section part in the IV testing curve to obtain a parasitic resistance value of the LDMOS device to be tested; obtaining a parasitic resistance change factor of the LDMOS device to be tested through the parasitic resistance value of the LDMOS device to be tested; and comparing the parasitic resistance change factor with a preset threshold, and judging the heat dissipation characteristic of the LDMOS device to be tested according to a comparison result. According to theinvention, the convenience and conciseness of evaluating the heat dissipation characteristic of the LDMOS device to be tested are improved.

Description

technical field [0001] The invention relates to the field of testing electronic components, in particular to a method and system for evaluating the heat dissipation characteristics of radio frequency power LDMOS devices. Background technique [0002] With the development of wireless communication systems, various wireless devices have entered people's lives. Each wireless device has one or more independent or integrated RF power LDMOS devices. Because of the power amplification function, LDMOS devices usually work In the state of high temperature and high current, the failure caused by random electrostatic discharge or circuit mismatch is often related to the heat generated inside the LDMOS device. [0003] The heat dissipation capability of LDMOS devices is a characteristic attribute of itself, and will not change with the application conditions. It is only affected by the structural size of the LDMOS device itself. In order to evaluate the heat dissipation capability of LD...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 李浩杜寰
Owner 北京顿思集成电路设计有限责任公司
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