A ka full-band power synthesis amplifier module and its waveguide path structure
A waveguide path and amplifier technology, applied in the field of Ka full-band power synthesis amplifier structure, can solve the problems of low synthesis efficiency and large volume of the synthesis network, achieve high-efficiency power synthesis, and realize the effect of miniaturization
Active Publication Date: 2021-11-02
合肥应为电子科技有限公司
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[0005] In view of this, the present invention provides a Ka full-band miniaturized power synthesis amplifier module and its waveguide path structure to solve the problems of low synthesis efficiency and large volume of the existing Ka-band lossy synthesis network
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[0026] The specific implementation manners of the present invention will be described in more detail below with reference to the drawings and examples.
[0027] In the following description of the present invention, "horizontal" refers to the signal input and output direction of the power synthesis amplifier module, and "longitudinal" refers to the direction orthogonal to the signal input and output direction of the power synthesis amplifier module; "forward" refers to the power synthesis amplifier The module as a whole is consistent with the input and output flow direction of the signal, and "backward" is opposite to the flow direction; "inner side" refers to the side close to the overall center of the power synthesis amplifier module, and "outer side" is closer to the overall peripheral side of the power synthesis amplifier module ; "Horizontal plane" refers to a plane parallel to the inner surface of the upper or lower cover of the power synthesis amplifier module.
[0028]...
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The present invention provides a Ka full-band power synthesis amplifier module and its waveguide path structure. The waveguide path structure includes a first waveguide path connected to the input signal or output signal of the power synthesis amplifier module, and the The second waveguide path is formed by extending symmetrically to both sides of the longitudinal direction, and the third waveguide path is formed by extending symmetrically forward from the end of the two second waveguide paths along the direction of signal transmission; the above-mentioned waveguide path is formed at the junction of each section A constricted portion of a cavity with a narrow passageway section. The power synthesizing amplifier module significantly expands the bandwidth of the waveguide transmission signal, realizes the power distribution and synthesizing of the full bandwidth of 26.5GHz-40GHz, and realizes the miniaturization of the amplifier structure at the same time.
Description
technical field [0001] The invention relates to a power amplifier in the technical field of microwave communication, in particular to a Ka full-band power synthesis amplifier structure. Background technique [0002] The Ka-band is part of the microwave band of the electromagnetic spectrum, with frequencies in the range 26.5-40 GHz and wavelengths in the millimeter wave band. The millimeter-wave power amplifier is a key device in the millimeter-wave system. How to improve the output power and work efficiency of the millimeter-wave solid-state power amplifier has always been a research hotspot of relevant scholars at home and abroad. [0003] Since the output power of a single MMIC (Monolithic Microwave Integrated Circuit) is limited, it is necessary to combine several power units to increase the power output in practical applications. The power combination in the millimeter wave band is mainly realized by various combinations of metal waveguides and planar microstrip circuit...
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IPC IPC(8): H01P3/12H03F3/24
Inventor 刘贵亚周鹏汪佳娣
Owner 合肥应为电子科技有限公司