Unlock instant, AI-driven research and patent intelligence for your innovation.

Multiplexing Method of PCM Memory Lines Based on Data Cyclic Shift

A memory row and data technology, applied in the field of PCM memory row multiplexing, can solve the problem that the memory row of the storage unit cannot continue to be used, waste, etc.

Inactive Publication Date: 2020-11-13
ZHEJIANG GONGSHANG UNIVERSITY
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When it is found that there is a stuck storage unit in a certain memory row, if the memory row is discarded, it means that a stuck storage unit will cause the entire memory row to be unusable, resulting in great waste

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multiplexing Method of PCM Memory Lines Based on Data Cyclic Shift
  • Multiplexing Method of PCM Memory Lines Based on Data Cyclic Shift

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The technical scheme of the method of the present invention will be further described below in conjunction with the accompanying drawings. figure 1 It is an optimized memory row structure, wherein (a) is a memory block structure composed of multiple memory rows (Blocks) horizontally, and (b) is a memory row with stuck flags, shift counters and flip flags added. figure 2 It is a stuck position cache, which contains multiple groups (Group), each group contains a large number of entries, and is addressed by a memory row address.

[0022] A kind of PCM memory multiplexing method based on data cyclic shift of the present invention comprises following technical steps:

[0023] Each memory row in the memory block adds a stuck flag (Stuck Bit), a shift counter (ShiftCounter) and a flip flag (Flip Bit). If the value of the stuck flag bit is 1, it means that a stuck unit has occurred in the current memory row; otherwise, if the value is 0, there is no stuck unit in the memory r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a PCM memory line multiplexing method based on data cyclic shift. The PCM memory line multiplexing method comprises the following steps: optimizing the structure of a memory line; Recording a stuck position cache of the stuck unit information; Multiplexing the write memory line operation of the jamming unit; And multiplexing the read memory line operation of the jamming unit. In order to solve the problem that a memory row is blocked due to short write life of a PCM memory, the method of abandoning the memory row is abandoned, the memory row structure is optimized, anda blocked position cache for recording blocked unit information is added; And combining the entry information in the stuck position cache, and writing the shifted data into a memory row with a stuck unit by adopting a data cyclic shifting method to realize multiplexing of the memory row. The method has the advantages of low storage cost and high calculation speed.

Description

[0001] Technical field [0002] The invention relates to a method for multiplexing PCM memory lines. Background technique [0003] The memory in current computers uses DRAM storage technology. With the continuous improvement of DRAM storage density, the storage unit is getting smaller and smaller, and the charge that can be accommodated is getting less and less, so that it cannot store data stably and long enough. Therefore, DRAM technology is slowly approaching the physical limit, and new storage is needed. technology to replace DRAM. Non-volatile phase change memory PCM (phase change memory) is a new and very competitive storage technology. PCM adopts a different storage principle, that is, stores and represents data through state changes of phase change materials instead of charges. Because there is no leakage current effect of DRAM, data can be stored permanently, and the storage density of PCM can be made higher. [0004] Each PCM memory cell includes a mixed metal lay...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F9/50
Inventor 章铁飞傅均
Owner ZHEJIANG GONGSHANG UNIVERSITY