Continuous coating device

Abstract

The invention provides a continuous film coating device. The continuous film coating device comprises a device body, a carrier disc module, an air hole plate and a movable conductive module, wherein the carrier disc module, the air hole plate and the movable conductive module are arranged on the device body; the device body is provided with a hollow film coating cavity; the carrier disc module ismovably arranged at the bottom side of the film coating cavity; the carrier disc module comprises a main carrier disc, a sub-carrier disc and a fixed part; the main carrier disc is used for accommodating the sub-carrier disc and the fixed part; the sub-carrier disc and the main carrier disc are spaced to form an isolation space through the arrangement of the fixed part; the isolation space extendsto the side edge of an accommodating groove to form a deposition gap, so that the spacing distance between the sub-carrier disc and the main carrier disc is 2-5 mm, wherein the sub-carrier disc is used for bearing a base material to be treated, so that the base material to be treated is prevented from splashing to the periphery to cause short circuit between the main carrier disc and the sub-carrier disc, and the processing efficiency of the base material to be treated is improved.

Description

technical field [0001] The invention relates to a continuous film coating device, in particular to a linearly moving continuous film coating device. Background technique [0002] Etching is a technology that removes materials by means of chemical reaction or physical impact. A traditional etching machine is equipped with a robot arm at the main center, and a transmission group and a positioning group are arranged in sequence around the robot arm. , reaction group and cleaning group. In actual use, the operator moves, positions and etchs the wafer to be processed through the robot arm. [0003] However, it takes a lot of time to use the robot arm to move the wafer to be processed, and the robot arm needs to be regularly repaired and calibrated to prevent the accuracy of the operation from being affected, and the wafer to be processed may fall during the moving process. Condition of damage. [0004] Therefore, in order to solve the above situation, a linearly moving etching ...

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Problems solved by technology

[0005] However, during the manufacturing process, the substrate to be processed will first undergo steps such as deposition and sputtering to form the required component structure on the substrate to be processed, but the steps of deposition and sputtering will not only form the component structure on the substrate to be processed, At the same time, these deposition and sputtering materials will also be formed on the surface of the insulating unit, so that the surface of the insulating unit originally used for insulation has conductivity, which affects the electric field generated by the metal conductor, and then disperses or diffuses the substrate to be processed. Agglomeration range, so it may reduce the efficiency of etching process during subsequent plasma etching

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