Middle of line structures

Abstract

The invention relates to middle of line structures. The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and / or drain metallization features; spacers on sidewalls of the gate structures and composed of a first material and a second material; and contacts in electrical contact with the source and / or drain metallization features, and separated from the gate structures by the spacers.

Description

technical field [0001] The present disclosure relates generally to semiconductor structures, and more particularly, to mid-end-of-line structures and fabrication methods. Background technique [0002] As semiconductor processes continue to shrink, eg, scale, the desired spacing between features (ie, pitch) also gets smaller. To this end, in smaller technology nodes, fabrication such as back-end-of-line (BEOL) and mid-line-of-line (MOL) metallization of interconnects due to critical dimension (CD) scaling and processing capabilities and materials used to fabricate such structures Characterization becomes even more difficult. [0003] For example, in order to fabricate interconnect structures for source and drain contacts, it is necessary to remove dielectric material adjacent to the gate structure. The removal of this dielectric material is provided by an etching process which also tends to attack the spacer material in the gate structure. That is, the low-k dielectric mat...

AI Technical Summary

Problems solved by technology

This loss of sidewall material will expose the metal material in the gate structure, causing a short circuit between the metal material in the gate structure and the metal material itself used to form the contact

Images