Microwave plasma device and plasma excitation method

A microwave plasma and plasma technology, applied in the field of plasma physics, can solve the problems of immature research and less research on microwave plasma, and achieve the effect of wide application prospects

Active Publication Date: 2019-07-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, domestic research on microwave plasma is relatively small, and foreign research is not fully mature.

Method used

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  • Microwave plasma device and plasma excitation method
  • Microwave plasma device and plasma excitation method
  • Microwave plasma device and plasma excitation method

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0054] Example 1 specifically describes a microwave plasma device and a plasma excitation method for generating, screening and maintaining atomic oxygen plasma when the device is used to oxidize silicon carbide by microwave.

[0055] The formation, screening and maintenance device of atomic oxygen plasma provided in this example, such as figure 1 As shown, it includes microwave generation unit, microwave transmission unit, plasma reaction unit, water cooling unit, air pressure unit and atomic state control unit.

[0056] Such as Image 6 As shown, the excitation of the atomic oxygen plasma of the above-mentioned device is realized by the following steps:

[0057] Step 1: Power on the device of the present invention, and confirm that the circulating water, cooling fan, gas cylinder ventilation, etc. are all in normal working condition;

[0058] Step 2: Lower the abutment, place the silicon carbide wafer, and raise the abutment. Turn on the vacuum pump to evacuate the plasma ...

example 2

[0065] Example 2 specifically describes the plasma excitation method for forming, screening and maintaining atomic nitrogen plasma when the microwave plasma device according to the embodiment of the present invention is used to implement another microwave nitrided silicon carbide.

[0066] The formation, screening and maintenance device of atomic state plasma provided in this example two, such as figure 1 As shown, it includes microwave generation unit, microwave transmission unit, plasma reaction unit, water cooling unit, gas unit and atomic state control unit.

[0067] Such as Figure 7 , the excitation of the atomic nitrogen plasma of the above-mentioned device is realized by the following steps:

[0068] Step 1: Power on the device of the present invention, and confirm that the circulating water, cooling fan, gas cylinder ventilation, etc. are all in normal working condition;

[0069] Step 2: Lower the abutment, place the silicon carbide wafer, and raise the abutment. T...

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Abstract

A microwave plasma device comprises the following parts: a plasma reaction unit having a cavity; an atomic state control unit comprising a gradient electrode, wherein the gradient electrode is arranged in the cavity and is configured to generate a gradient electric field in at least part of space of the cavity; a gas unit used for introducing gas into the cavity of the plasma reaction unit; and amicrowave generation unit for generating and transmitting microwaves to the at least part of space. The device provided by the invention can realize generation, screening and maintenance of atomic state plasmas by means of a gradient external electric field disturbance device, and can also realize regulation and excitation of molecular state plasmas and atomic state plasmas.

Description

technical field [0001] The invention relates to the fields of semiconductor technology and plasma physics, in particular to a microwave plasma device and a plasma excitation method using the microwave plasma device. Background technique [0002] In the universe, plasma is the main normal state of matter, also known as the fourth state of matter, that is, ionized "gas", which presents a highly excited unstable state, including ions (with different signs and charges) ), electrons, atoms and molecules. With the continuous deepening of people's understanding of plasma, plasma technology has also been developed rapidly. At present, plasma technology is widely used in fields such as medicine, physics, environment, semiconductors, etc., such as plasma smelting, plasma spraying, plasma welding, plasma Etching, plasma oxidation, etc. [0003] The most common plasma generation method is the gas discharge method, and the main excitation methods are: DC discharge, AC discharge, radio ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46
CPCH05H1/46H05H1/461H05H1/0037H05H1/463
Inventor 刘新宇王盛凯汤益丹白云
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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