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Microwave plasma device and plasma excitation method

A technology of microwave plasma and plasma, applied in the field of plasma physics, can solve the problems of immature research and less research on microwave plasma, and achieve the effect of wide application prospects

Active Publication Date: 2021-12-03
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, domestic research on microwave plasma is relatively small, and foreign research is not fully mature.

Method used

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  • Microwave plasma device and plasma excitation method
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  • Microwave plasma device and plasma excitation method

Examples

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Comparison scheme
Effect test

example 1

[0054] Example 1 specifically describes a microwave plasma device and a plasma excitation method for generating, screening and maintaining atomic oxygen plasma when the device is used to oxidize silicon carbide by microwave.

[0055] The formation, screening and maintenance device of atomic oxygen plasma provided in this example, such as figure 1 As shown, it includes microwave generation unit, microwave transmission unit, plasma reaction unit, water cooling unit, air pressure unit and atomic state control unit.

[0056] Such as Figure 6 As shown, the excitation of the atomic oxygen plasma of the above-mentioned device is realized by the following steps:

[0057] Step 1: Power on the device of the present invention, and confirm that the circulating water, cooling fan, gas cylinder ventilation, etc. are all in normal working condition;

[0058] Step 2: Lower the abutment, place the silicon carbide wafer, and raise the abutment. Turn on the vacuum pump to evacuate the plasma...

example 2

[0065] Example 2 specifically describes the plasma excitation method for forming, screening and maintaining atomic nitrogen plasma when the microwave plasma device according to the embodiment of the present invention is used to implement another microwave nitrided silicon carbide.

[0066] The formation, screening and maintenance device of atomic state plasma provided in this example two, such as figure 1 As shown, it includes microwave generation unit, microwave transmission unit, plasma reaction unit, water cooling unit, gas unit and atomic state control unit.

[0067] Such as Figure 7 , the excitation of the atomic nitrogen plasma of the above-mentioned device is realized by the following steps:

[0068] Step 1: Power on the device of the present invention, and confirm that the circulating water, cooling fan, gas cylinder ventilation, etc. are all in normal working condition;

[0069] Step 2: Lower the abutment, place the silicon carbide wafer, and raise the abutment. T...

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Abstract

A microwave plasma device, including: a plasma reaction unit with a cavity; an atomic state control unit including a gradient electrode, the gradient electrode is arranged in the cavity, and is configured to be in at least a part of the space of the cavity A gradient electric field is generated; a gas unit is used to feed gas into the cavity of the plasma reaction unit; a microwave generation unit is used to generate and transmit microwaves to the at least part of the space. The device of the present invention can realize the generation, screening and maintenance of atomic state plasma by means of the gradient external electric field disturbance device, and can also realize the control and excitation of molecular state plasma and atomic state plasma.

Description

technical field [0001] The invention relates to the fields of semiconductor technology and plasma physics, in particular to a microwave plasma device and a plasma excitation method using the microwave plasma device. Background technique [0002] In the universe, plasma is the main normal state of matter, also known as the fourth state of matter, that is, ionized "gas", which presents a highly excited unstable state, including ions (with different signs and charges) ), electrons, atoms and molecules. With the continuous deepening of people's understanding of plasma, plasma technology has also been developed rapidly. At present, plasma technology is widely used in fields such as medicine, physics, environment, semiconductors, etc., such as plasma smelting, plasma spraying, plasma welding, plasma Etching, plasma oxidation, etc. [0003] The most common plasma generation method is the gas discharge method, and the main excitation methods are: DC discharge, AC discharge, radio ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/46
CPCH05H1/46H05H1/461H05H1/0037H05H1/463
Inventor 刘新宇王盛凯汤益丹白云
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI