Atomic layer etch process using plasma in conjunction with a rapid thermal activation process

Abstract

A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, andother low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.

Description

[0001] related application [0002] This application is based on and claims priority to US Provisional Patent Application Serial No. 62 / 434,036, filed December 14, 2016, which is incorporated herein by reference. Background technique [0003] Plasma processing is widely used in the semiconductor industry for deposition, etching, resist removal, and related processing of semiconductor wafers and other substrates. Plasma sources (eg, microwave, ECR, induction, etc.) are commonly used in plasma processing to generate high density plasma and reactive species for processing substrates. [0004] One type of process that has been performed using plasma in the past is atomic layer etching. Atomic layer etching is a technique that performs critical etching with very high precision and is used in semiconductor device manufacturing. Atomic layer etching is performed on thin layers while attempting to avoid undue subsurface damage or undesired modification. Atomic layer etching can be ...

AI Technical Summary

Problems solved by technology

However, the traditional method described above using ion bombardment activation has not been successful on other layers, especially carbon-containing layers and other low-k dielectric films.

For example, these other materials are less reactive to ion bombardment and more reactive to chemical reactions

Additionally, in some embodiments, higher temperatures are required for the etch process to occur, which can result in very long etch cycles that provide less control over the process

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