Preparation method of rhenium disulfide photoelectric material supported and grown on pollen carbon skeleton

A technology of rhenium disulfide and optoelectronic materials, which is applied in the field of bionic nanomaterials, can solve the problems of rhenium disulfide growing on pollen carbon skeleton, improper control of pollen carbonization conditions, and incompatibility between skeleton and materials, and achieves reduction of preparation cost and low price. , The effect of convenient operation and maintenance

Active Publication Date: 2019-08-16
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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Problems solved by technology

However, these previous methods have the problems of improper control of pollen carbonization conditions, resulting in damage to pollen morphology, low degree of carbonization resulting in excessive impurities, and insufficient bonding of the framework and materials.
Moreover, in the previously reported materials, there is no method for growing rhenium disulfide on the pollen carbon skeleton

Method used

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  • Preparation method of rhenium disulfide photoelectric material supported and grown on pollen carbon skeleton
  • Preparation method of rhenium disulfide photoelectric material supported and grown on pollen carbon skeleton
  • Preparation method of rhenium disulfide photoelectric material supported and grown on pollen carbon skeleton

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Embodiment 1

[0041] Select unbroken rape bee pollen (other kinds of unbroken pollen can also be used, such as lotus pollen, peony pollen) 10g (Jiangxi Ganzhou Shicheng County Kanghuang Bee Industry Co., Ltd.), soak in 100ml absolute ethanol (AR, Chengdu Kelong Chemical Co., Ltd.) Products Co., Ltd.) was placed in a 250mL beaker, and then the mixture was subjected to ultrasonic treatment for 1 hour, with an ultrasonic power of 75W and a frequency of 40KHz, and then rinsed with deionized water for 3 times. Ethanol will penetrate the pollen shell and enter the core, and the surface of the pollen and the material in the core are dissolved and washed.

[0042] Then proceed to one of the three key steps in this implementation example: Measure 50mL of absolute ethanol and 50mL of formaldehyde solution (AR, 37-40%, Chengdu Kelong Chemical Co., Ltd.), mix well, add to the above steps to wash The pollen was stirred with a magnetic stirrer for 10 minutes, and then washed and filtered with deionized w...

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Abstract

The invention discloses a preparation method of a rhenium disulfide photoelectric material supported and grown on a pollen carbon skeleton. The preparation method comprises the following steps: weighing pollen and ultrasonically cleaning the pollen in ethanol; using formaldehyde to repair pollen morphology; pre-carbonizing the pollen with concentrated sulfuric acid; weighing a reaction precursor for hydrothermal reaction for synthesis of a product; and separating, drying and annealing the product. The rhenium disulfide photoelectric material supported and grown on the pollen carbon skeleton prepared by the preparation method has the advantages of compact and uniform appearance, layered and porous structure, large specific surface area and three-dimensional appearance structure, and meanwhile, the carbonized pollen carbon skeleton has the characteristics of good conductivity, and rhenium disulfide has the characteristics of good light absorption, so that the material has excellent photoelectric performance. The raw material pollen is cheap and easily available, all raw materials are safe and nontoxic, and the preparation method is environment-friendly and easy for industrial production.

Description

technical field [0001] The invention belongs to the technical field of biomimetic nanometer materials, and in particular relates to a preparation method of rhenium disulfide optoelectronic material supported and grown by pollen carbon skeleton. Background technique [0002] Graphene material was first isolated in 2004 and won the Nobel Prize in 2010. Subsequently, the special two-dimensional structure of graphene makes it have excellent electrical conductivity, which has attracted much attention. However, the shortcoming of graphene's zero bandgap limits its application. Therefore, researchers focus on non-zero bandgap materials that also have two-dimensional structure characteristics, such as black scales, transition metal sulfides, transition metal carbides, etc. [0003] Recently, transition metal dichalcogenides (TMDs) have attracted extensive attention in the fields of electronics, optoelectronics, spintronics, valleytronics, and catalysis due to their special structu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04B01J35/00B01J37/08B01J37/10
CPCB01J27/04B01J37/10B01J37/084B01J35/0033
Inventor 张璋汪敏捷刘元武张颖李婧黄文添
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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