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LED chip and its preparation method, display module, intelligent terminal

A technology of LED chips and functional layers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as inability to detect PL of microLED chips

Active Publication Date: 2020-11-10
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present application provides an LED chip and its preparation method, a display module, and an intelligent terminal, which are used to solve the problem that PL detection cannot be performed on a large number of micro LED chips

Method used

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  • LED chip and its preparation method, display module, intelligent terminal
  • LED chip and its preparation method, display module, intelligent terminal
  • LED chip and its preparation method, display module, intelligent terminal

Examples

Experimental program
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Effect test

preparation example Construction

[0092] The preparation method of the substrate 100 includes adopting a crystal growth process to prepare sapphire (aluminum oxide (Al 2 o 3 )) crystal column. Then slice and polish the crystal column to obtain the above-mentioned substrate 100 . For example, the thickness of the substrate 100 may be about 2 Inch.

[0093] In addition, the main epitaxial layer 110 of the main device 60, in addition to the first semiconductor layer 111, the second semiconductor layer 112 and the first light emitting layer 113, also includes Figure 6a The shown semiconductor nucleation layer 114, non-doped semiconductor layer 115, low-doped semiconductor layer 116, superlattice layer 117, electron blocking layer 118, ohmic contact layer 119 and distributed Bragg reflection layer (distributed brag reflection, DBR )120.

[0094] Based on this, the manufacturing method of the main device 60 includes: first, in such as Figure 6a On the upper surface of the substrate 100 is shown, a semiconduct...

example 1

[0140] In this example, the above-mentioned S102 manufacturing the antenna structure 40 includes making a plurality of antenna structures 40 insulated from the main epitaxial layer 110 on the outside of the main epitaxial layer 110, such as Figure 11a The conductive coil 400 is shown.

[0141] Both ends of each conductive coil 400 are respectively in contact with the first electrode 121 and the second electrode 122 located in the same building area 30, and at least a part of each conductive coil 400 is located at the cut between two adjacent building areas 30 Inside Road 31.

[0142] In some embodiments of the present application, such as Figure 11a As shown, the above-mentioned first electrode 121 (or second electrode 122 ) may be located in the conductive coil 400 . In addition, any two coil turns in the conductive coil 400 do not intersect, that is, there is no overlapping area in the orthographic projection of each part of the conductive coil 400 on the main epitaxial ...

example 2

[0186] In this example, above-mentioned S102 manufactures the antenna structure 40 including as Figure 16a As shown, on the outside of the main epitaxial layer 110 , a plurality of conductive coils 400 are fabricated, and each conductive coil 400 is located in a building area 30 .

[0187] In this example, the two ends of each conductive coil 400 are referred to as a first end and a second end. Wherein, the first end of the conductive coil 400 faces the first electrode 121 , and the second end of the conductive coil 400 faces the second electrode 122 .

[0188] In this case, in order to couple the first end of the conductive coil 400 to the first electrode 121 and the second end to the second electrode 122, a connection between the first end of each conductive coil 400 and the first electrode 121 is formed. The second end of the capacitor is in contact with the second electrode 122 .

[0189] Alternatively, a capacitance is formed between the first end of each conductive co...

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Abstract

The embodiment of the invention provides an LED chip and a preparation method thereof, a display module and an intelligent terminal, relates to the technical field of semiconductors, and is used for solving the problem that PL detection cannot be carried out on a large number of micro LEDs. The LED chip includes a main device and at least a portion of an antenna structure. The main device includesa main epitaxial layer, a first electrode, and a second electrode. The main epitaxial layer comprises a first semiconductor layer and a first functional layer covering a partial region of the upper surface of the first semiconductor layer. The first functional layer includes a second semiconductor layer and a first light emitting layer. The first light emitting layer is located between the firstsemiconductor layer and the second semiconductor layer. The first electrode is disposed on an upper surface of the first semiconductor layer and coupled to the first semiconductor layer. The second electrode is disposed on the upper surface of the second semiconductor layer and coupled to the second semiconductor layer. The antenna structure is coupled to the first electrode and the second electrode. The antenna structure is used for receiving a radio frequency signal and generating a potential difference between the first electrode and the second electrode.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to an LED chip and a manufacturing method thereof, a display module, and an intelligent terminal. Background technique [0002] With the continuous development of display technology, compared with liquid crystal display (LCD), micro (micro) organic light emitting diode (light emitting diode, LED) is a current-mode light-emitting device, because of its self- Luminescence, high luminous efficiency, color saturation, brightness, reliability, and the ability to be fabricated on flexible substrates are increasingly being used in the field of high-performance displays. [0003] In a micro LED display, each micro LED can be used as a sub pixel. In order to reduce the probability of dead pixels (sub-pixels that cannot emit light) in the display process of the micro LED display, it is necessary to perform photoluminescence (PL) detection on the micro LED during the producti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/20H01L33/36H01L33/38H01L33/48
CPCH01L33/005H01L33/20H01L33/36H01L33/38H01L33/48
Inventor 曲爽代郁峰
Owner HUAWEI TECH CO LTD