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Acoustic resonator

A technology of acoustic resonator and device layer, applied in the direction of impedance network, electrical components, etc., can solve problems such as poor electromechanical coupling

Pending Publication Date: 2019-10-11
QORVO US INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] While BAW resonators capable of operating in higher order modes allow for improved performance at high frequencies, attempts to fabricate such devices provide very poor electromechanical coupling

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  • Acoustic resonator
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Embodiment Construction

[0020] The embodiments set forth below represent the necessary information to enable one skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. After reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not specifically addressed herein. It should be understood that these concepts and applications are within the scope of this disclosure and the appended claims.

[0021] It will be understood that, although the terms first, second etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disc...

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Abstract

An acoustic resonator includes a first piezoelectric layer, a second piezoelectric layer, a coupler layer, a first electrode, and a second electrode. The first piezoelectric layer has a first polarity. The second piezoelectric layer has a second polarity opposite the first polarity. The coupler layer is between the first piezoelectric layer and the second piezoelectric layer. The first electrode is on the first piezoelectric layer opposite the coupler layer. The second electrode is on the second piezoelectric layer opposite the coupler layer.

Description

[0001] related application [0002] This application claims the benefit of Provisional Patent Application Serial No. 62 / 649,343, filed March 28, 2018, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] The present disclosure relates to bulk acoustic wave (BAW) resonators capable of operating in higher order modes with enhanced piezoelectric coupling. Background technique [0004] figure 1 A fundamental bulk acoustic wave (BAW) resonator 10 is shown. The fundamental mode BAW resonator 10 includes a piezoelectric layer 12 between a first electrode 14 and a second electrode 16 . The thicknesses of the piezoelectric layer 12, the first electrode 14 and the second electrode 16 are shown as distances from the center of the thickness of the fundamental mode BAW resonator 10, where d is half the thickness of the piezoelectric layer 12 and t is the first electrode 14 and the thickness of both the second electrode 16. [0005] f...

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Application Information

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IPC IPC(8): H03H9/02
CPCH03H9/02015H03H9/02157H03H9/174H03H9/175H03H9/02078H03H9/02047H03H9/17
Inventor 乔蒂·斯瓦鲁普·萨杜格诺特·法廷格罗伯特·艾格纳迈克尔·舍费尔
Owner QORVO US INC