Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for programming multi-level cell NAND flash memory device and MLC NAND flash memory device

A technology of flash memory devices and flash memory, applied in the field of methods and MLCNAND flash memory devices, can solve problems such as taking a long time to detect programming voltages

Active Publication Date: 2019-10-15
YANGTZE MEMORY TECH CO LTD
View PDF10 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ISPP may take a long time to detect the programming voltage when the deviation of the programming voltage is large, because a large number of programming pulses must be applied to the memory cell in order to establish the required threshold voltage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for programming multi-level cell NAND flash memory device and MLC NAND flash memory device
  • Method for programming multi-level cell NAND flash memory device and MLC NAND flash memory device
  • Method for programming multi-level cell NAND flash memory device and MLC NAND flash memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] figure 1 is a block diagram of a multi-level cell (MLC) NAND flash memory device 1 according to an embodiment of the present invention. The MLC NAND flash memory device 1 includes a programming voltage generation circuit 10 , a controller 12 and a NAND flash memory 14 . Programming voltage generating circuit 10 is coupled to NAND flash memory 14, and controller 12 is coupled to programming voltage generating circuit 10 and NAND flash memory 14 to control operations thereof. The NAND flash memory 14 includes a plurality of pages (pages) 140 to 14m, where m is a positive integer. Each of pages 140 through 14m includes a plurality of memory cells arranged in an array, and each memory cell can be programmed to one of N possible program states, where N can be eight. Specifically, each memory cell may be programmed to the lowest program state using a start programming voltage Vpg(1) and to a higher program state using a higher state programming voltage Vpg(n), where n is 2 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method of programming a NAND flash memory device, comprising: a programming voltage generation circuit applying an initial programming voltage pulse to a predetermined page of a NAND flash memory; the controller verifying a plurality of verification levels of the predetermined page, the plurality of verification levels being less than a first state verification voltage verifying the lowest program state of the predetermined page; the controller determining a magnitude of a subsequent programming voltage pulse when one of the plurality of verification levels of the predetermined page passes verification; and the programming voltage generation circuit applying the subsequent programming voltage pulse to the predetermined page.

Description

technical field [0001] The present invention relates to semiconductor devices, and in particular to methods of programming multi-level cell (MLC) NAND flash memory devices and MLC NAND flash memory devices. Background technique [0002] NAND flash memory is widely used for non-volatile data storage in mobile devices and consumer electronics, and stores data in an array of memory cells by programming the memory cells to different program states. In single-level cell (SLC) flash memory, a memory cell has two possible program states, and in 2-bit multi-level cell (MLC) flash memory, a memory cell has four possible program states. Flash memory can use several read levels corresponding to different program states to read data from memory cells. [0003] Generally, memory cells can be set into various program states by applying corresponding programming voltages to the memory cells. However, memory cells may degrade and a shift in programming voltage may occur over time. Theref...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/12G11C16/34
CPCG11C16/12G11C16/3459G11C11/5628G11C16/10G11C16/0483G11C2211/5621G11C16/26
Inventor 万维俊
Owner YANGTZE MEMORY TECH CO LTD