A germanium-silicon-based gallium arsenide material and its preparation method and application
A silicon-based gallium arsenide and gallium arsenide technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor thermal conductivity, high-density dislocations, and CMOS process incompatibility, and achieve suppression of inversion Domain, the effect of stress release
Active Publication Date: 2021-09-28
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0008] (1) Poor thermal conductivity;
[0009] (2) The bonding yield is not high;
[0010] (3) The sizes of III-V wafers and silicon wafers do not match (III-V: 2-6 inches; silicon: 8-12 inches)
[0012] (1) The silicon small-angle beveled substrate needs special preparation, and is not compatible with the CMOS process, and is an unconventional substrate;
[0013] (2) The difference in thermal expansion coefficient and lattice mismatch lead to a large number of thermal cracks and high-density dislocations;
[0014] (3) The growth structure is extremely complex (dislocation filtering layer and other technologies are required to suppress the extension of threading dislocations), and gallium arsenide with a thickness of more than 2 μm is required
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0043] This example is intended to illustrate the germanium-silicon group arsena material of the present invention and the preparation method thereof.
[0044] (1) form a periodic groove structure on silicon substrate:
[0045] The surface of the silicon (100) substrate is used for plasma reinforcing vapor deposition methods, and the growth of SiO 2 Mask; using deep ultraviolet photolithography in SIO 2 The periodic groove structure is constructed in the (110) direction; the surface of the silicon substrate having a periodic groove structure is completed by the reaction ion etching technique; the surface SiO is removed by hydrofluoric acid 2 Mask;
[0046](2) Using molecular beam epitaxial growth technique, a germanium intermediate layer having a periodic groove structure is epitaxially, which has a cyclical groove structure, and a growth temperature of 340 ° C, which is a germanium (113) crystal surface, and has a sawtooth. A pattern structure;
[0047] (3) Direct epitaxial growt...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| depth | aaaaa | aaaaa |
| width | aaaaa | aaaaa |
| depth | aaaaa | aaaaa |
Login to View More
Abstract
The invention provides a germanium-silicon-based gallium arsenide material and its preparation method and application. The germanium-silicon-based gallium arsenide material includes a silicon substrate with a periodic groove structure on the surface, and is attached to the silicon substrate. a germanium intermediate layer on the surface, and a gallium arsenide layer attached to the surface of the germanium intermediate layer. The present invention utilizes the inhibitory effect of the germanium (113) crystal plane on the gallium arsenide anti-phase domain and the characteristics of germanium and gallium arsenide lattice matching to eliminate the stress generated by silicon and gallium arsenide due to the lattice mismatch, thereby in III‑ The epitaxial growth of high-quality single crystal and ultra-thin gallium arsenide on silicon (100) substrates is realized on group V molecular beam epitaxy equipment.
Description
Technical field [0001] The present invention relates to a germanium-silicon group arsenide material and a preparation method thereof. Background technique [0002] With the failure of mole law, the development of microelectronic chips faces unprecedented difficulties. Intel's recent report shows that the amount of data from Google Data Center has exceeded 5zetabyte (2 70 Bytes, Facebook's data center investment has also exceeded 1 billion US dollars. Therefore, the data transmission bandwidth is thus significantly improved by the silicon light electronic integrated chip. As the optical transmission rate of the data center is incorporated into 400g of 400g, the mixing integration of the III-V active optoelectronic device and silicon-silicon-based electronics is thus becoming. Further, the demand for the light source on the silicon substrate in the future chip is extremely urgent. [0003] Silicon-based photoelectric integration is currently the "lack of silicon-based high performa...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/203H01L21/24
CPCH01L21/2036H01L21/242
Inventor 张建军王霆张结印
Owner INST OF PHYSICS - CHINESE ACAD OF SCI