Interdigitated structure, lower electrode assembly and process chamber

Abstract

The invention discloses an interdigitated structure, a lower electrode device and a process chamber. It includes an interdigitated member, wherein the interdigitated member includes at least two oppositely arranged interdigitated arms, and the interdigitated arms respectively extend along the outer edge of the workpiece so as to enclose the workpiece in the opposite between the interdigitated arms; and, each interdigitated arm is provided with at least one protrusion protruding toward the center of the workpiece for supporting the edge region of the lower surface of the workpiece. The interdigitated arm of the present invention does not pass through the central core area of ​​the workpiece, so that the electromagnetic field and temperature of the workpiece can be evenly distributed, and the range of the poor process area can be shortened to the edge area of ​​the workpiece, and the output rate of the workpiece can be improved. Moreover, in the actual process, the workpiece in the edge area can be cut off, so that the output rate of the workpiece can be further improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor equipment, in particular to an interdigitated structure, a lower electrode device including the interdigitated structure, and a process chamber including the lower electrode device. Background technique [0002] Enhanced plasma vapor deposition equipment (PECVD, Plasma Enhanced Chemical VaporDeposition), is a thin film commonly used in related fields such as light-emitting diodes (LED, Light Emitting Diode) and micro-electromechanical systems (MEMS, Micro-Electro-Mechanical System) Deposition equipment, the main application is to deposit a layer of SiO2 / SiNx thin film on the surface of silicon wafer or sapphire wafer. At present, this kind of equipment has been widely used in related semiconductor fields. [0003] In order to increase the productivity of plasma vapor deposition equipment, the main method is to increase the amount of wafer placement in a single process or to adopt a f...

AI Technical Summary

Problems solved by technology

An obvious electromagnetic field mutation will be caused at the position of the interdigitated parts. This abnormal electromagnetic field mutation will deteriorate the process results of the corresponding area on the workpiece, resulting in deterioration of process uniformity.

[0008] 2. The bearing part is a heating body, which generates heat by itself and has a high temperature. The interdigitated part is a heated body, and its temperature is lower than that of the bearing part. This will cause the overall temperature uniformity of the workpiece to be poor, resulting in poor process uniformity of the workpiece

[0010] 4. Although the upper surface of the fork finger passes through most of the workpiece and the center of gravity of the workpiece is on the fork finger, when the fork finger lifts the workpiece, the fork finger cannot effectively fix the workpiece. When the fork finger rotates along the circumferential direction The workpiece may slip off the fingers when in place

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