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End point detection method and system and chemical mechanical planarization device

An end-point detection and end-point technology, used in grinding devices, grinding machine tools, electrical components, etc., can solve the problems of complex polishing process, misjudgment, inaccurate judgment of polishing end point, etc., and achieve the effect of ensuring polishing quality and improving accuracy.

Active Publication Date: 2019-11-01
TSINGHUA UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, in the prior art, due to the complexity of the polishing process and many actuators involved, the judgment of the polishing end point is inaccurate, resulting in misjudgment and affecting the final polishing effect

Method used

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  • End point detection method and system and chemical mechanical planarization device
  • End point detection method and system and chemical mechanical planarization device
  • End point detection method and system and chemical mechanical planarization device

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Experimental program
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Embodiment approach

[0078] As a possible implementation of the present invention, step S2 includes:

[0079] Step S21, acquiring the load parameters of the polishing disc 10 and the motion parameters of the carrier head 20 and / or the motion parameters of the dresser 40;

[0080] Step S22 , eliminating the influence of the motion parameters of the carrier head 20 and / or the motion parameters of the trimmer 40 on the load parameters from the load parameters.

[0081] Wherein, the load parameters include load rate, load power, torque and / or motor current of the first motor used to drive the polishing disc 10 to rotate.

[0082] During polishing, the carrying head 20 performs reciprocating horizontal movement along the radial direction of the polishing disc 10, and the dressing head 43 performs reciprocating swinging motion according to the trajectory from the center of the polishing pad to the edge, and these movements will bring periodicity to the load parameters of the polishing disc 10. The sign...

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Abstract

The invention is applicable to the technical field of chemical mechanical planarization, and provides an end point detection method and system and a chemical mechanical planarization device. The method comprises the following steps that operation parameters of a planarization disk is acquired during a wafer planarization period; fluctuation influence of the operation parameters is eliminated to obtain a normalized friction factor; and a planarization end point is determined according to the friction factor. According to the method, the accuracy rate of the end point detection in the chemical mechanical planarization process is improved, and the planarization quality is effectively ensured.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and in particular relates to an endpoint detection method, system and chemical mechanical polishing device. Background technique [0002] Chemical Mechanical Planarization (CMP) is a global surface planarization technique used in semiconductor manufacturing to reduce the impact of wafer thickness variations and surface topography. Since CMP can accurately and uniformly planarize the wafer to the required thickness and flatness, it has become the most widely used surface planarization technology in the semiconductor manufacturing process. [0003] The realization process of the CMP process is: the carrier head holds the wafer and rotates at a certain speed and horizontally reciprocates. The composed polishing liquid flows between the wafer and the polishing pad, and the polishing liquid is evenly distributed under the transmission of the polishing pad and the rotating centri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/013B24B37/04H01L21/67
CPCB24B37/013B24B37/04H01L21/67253
Inventor 赵德文路新春
Owner TSINGHUA UNIV
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