A transfer carrier, its manufacturing method and transfer method of light-emitting diode chips
A technology of light-emitting diodes and transfer methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high transfer process cost, low efficiency, and difficulty in large-scale size, and achieve high transfer efficiency and material cost. Low, easy to upsize effect
Active Publication Date: 2021-08-31
BOE TECH GRP CO LTD
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Problems solved by technology
[0004] Embodiments of the present invention provide a transfer carrier, its manufacturing method, and a method for transferring light-emitting diode chips, which are used to solve the problems of high cost, low efficiency, and difficulty in large-scale transfer of light-emitting diode chips existing in the prior art
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Embodiment Construction
[0044] Aiming at the problems of high cost, low efficiency, and difficulty in large-scale transfer process of LED chips existing in the prior art, embodiments of the present invention provide a transfer carrier, a manufacturing method thereof, and a transfer method of LED chips.
[0045] The specific implementation of the transfer carrier provided by the embodiments of the present invention, its manufacturing method and the transfer method of the light emitting diode chip will be described in detail below with reference to the accompanying drawings. The thickness and shape of each film layer in the drawings do not reflect the real scale, and the purpose is only to illustrate the content of the present invention.
[0046] In the first aspect, the embodiment of the present invention provides a transfer carrier, such as figure 1 As shown, the transfer carrier 11 includes:
[0047] The base 111 has a plurality of through holes U through the thickness of the base 111; the base 111...
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The invention discloses a transfer carrier, a manufacturing method thereof and a method for transferring light-emitting diode chips. The transfer carrier includes: a base having a plurality of through holes penetrating through the thickness of the base; the base includes opposite first surfaces and second Surface: thermoplastic structure, the thermoplastic structure fills the corresponding through hole, and one end of the thermoplastic structure protrudes from the second surface of the substrate, and the other end covers the first surface of the area around the corresponding through hole. The transfer carrier provided by the embodiment of the present invention has a simple structure, is easy to achieve large size, and has low material cost. During the transfer process of the LED chip, the heated LED chip can be embedded in the thermoplastic structure, and then can be used after cooling. The thermoplastic structure grips the LED chip, and the transfer process is inexpensive and easy to implement with high transfer efficiency.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a transfer carrier, a manufacturing method thereof and a transfer method of a light-emitting diode chip. Background technique [0002] Micro light-emitting diodes (Light Emitting Diode, LED) are receiving more and more attention in the field of displays due to their excellent characteristics such as self-illumination, high luminous efficiency, high contrast, wide operating temperature range, long life, low power consumption, and very fast response time. The more people pay attention. [0003] Among them, due to the advantages of self-illumination, simple structure, small size and energy saving of mini LED (Mini LED / Micro LED) chip, the display technology of mini LED will become the revolutionary technology of the next generation. Technology, due to slow speed and high cost, it is difficult to commercialize. Although there are transfer technologies based on van der Waals force, ...
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IPC IPC(8): H01L21/677H01L21/687
CPCH01L21/67778H01L21/68714H01L21/68757H01L33/0095H01L25/0753
Inventor 麦轩伟曹占锋王珂李海旭梁志伟吕志军
Owner BOE TECH GRP CO LTD