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Pixel structure, image sensor and terminal

An image sensor and pixel structure technology, applied in the image field, can solve problems such as spectral crosstalk and large pixel structure size, and achieve high quantum efficiency

Active Publication Date: 2019-11-26
GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This technology allows for creation of an improved pixel design with multiple types of photovoltaic units arranged together on top of each other. Each layer contains two different components: one converts certain colors into electrical energy while another captures them onto special materials like crystals or silicon chips. These layers can be used alone or combined to achieve higher levels of sensitivity without increasing their overall dimensions.

Problems solved by technology

This patented technology describes an imaging device called Fovex 3 which captures images from various colored lights at varying distances downward through space. Its technical problem being addressed by researchers is how to improve its performance while reducing sensitivity issues caused by interference patterns or other factors such as chromatic aberrations due to differences in optical properties across multiple pixels.

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  • Pixel structure, image sensor and terminal
  • Pixel structure, image sensor and terminal
  • Pixel structure, image sensor and terminal

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Embodiment Construction

[0024] In order to understand the characteristics and technical contents of the embodiments of the present application in more detail, the implementation of the embodiments of the present application will be described in detail below in conjunction with the accompanying drawings. The attached drawings are only for reference and description, and are not intended to limit the embodiments of the present application.

[0025] In practical applications, the pixel structure, as an important part of the image sensor, can complete the photoelectric conversion of the received natural light to obtain electrical signals. However, when the pixel size of the pixel structure is about 600nm, the photoelectric conversion unit has a higher Quantum efficiency, as the size of the pixel structure decreases, the area of ​​the photosensitive region of the photoelectric conversion unit also decreases, thereby reducing the quantum efficiency of the photoelectric conversion unit and affecting the imagin...

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Abstract

The embodiment of the invention discloses a pixel structure, an image sensor and a terminal. The pixel structure comprises a first sub-pixel structure, the first sub-pixel structure comprises a firsttype of photoelectric conversion units and a second type of photoelectric conversion units which are stacked; the corresponding relationship between the wavelength and the penetration depth is utilized, the first type of photoelectric conversion units at a shallow position absorb optical signals of a first specific wavelength, and the second type of photoelectric conversion units at the deeper position absorb optical signals of a second specific wavelength; moreover, the first type of photoelectric conversion units absorb the optical signals of the first specific wavelength according to the resonance wavelength of the photosensitive area, and the size of the photosensitive area of the first type of photoelectric conversion units is adjusted to ensure that the photoelectric conversion unitshave high quantum efficiency, thereby meeting the requirements of the image sensor for small size and high pixel.

Description

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Claims

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Application Information

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Owner GUANGDONG OPPO MOBILE TELECOMM CORP LTD