Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

a sio 2 Preparation method of chitosan-based lead ion-imprinted hollow microspheres

A lead ion and chitosan technology is applied in the field of preparation of SiO2/chitosan-based lead ion imprinted composite hollow microspheres, which can solve the problems of reduced adsorption capacity and loss of reactivity of chitosan, and achieves improved adsorption performance, The effect of high porosity and high porosity

Active Publication Date: 2022-07-29
晋江瑞碧科技有限公司 +1
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because some of the active amino groups and carboxyl groups on chitosan react with the cross-linking agent and lose their reactivity, the adsorption capacity of chitosan is greatly reduced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a sio <sub>2</sub> Preparation method of chitosan-based lead ion-imprinted hollow microspheres
  • a sio <sub>2</sub> Preparation method of chitosan-based lead ion-imprinted hollow microspheres
  • a sio <sub>2</sub> Preparation method of chitosan-based lead ion-imprinted hollow microspheres

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] (1) The preparation of the quenching solution is as follows: add 1 g of polyurethane, 3 g of acetone, and 12 g of tetrahydrofuran to a 100-mL three-necked flask, stir magnetically at 50°C for 2 hours, and dissolve to form a homogeneous solution. 0.02 g of nano-hydroxyapatite was added to the homogeneous solution, and the solution was magnetically stirred and uniformly mixed at room temperature to obtain a quenching solution. Put the quenching solution in a refrigerator pre-cooled to -20 °C for 4 hours. After quenching, take it out of the refrigerator quickly, put it into 500 mL of ice-water mixture, remove acetone and tetrahydrofuran, and repeatedly change distilled water, wash, and freeze-dry to obtain polyurethane. Microspheres.

[0038] (2) 10g of ethanol, 30g of distilled water, 1.2g of sodium silicate, 0.1g of polyethylene glycol, and 0.01g of cetyltrimethylammonium bromide were added to the there-necked flask, and dissolved by magnetic stirring. After the dissolut...

Embodiment 2

[0042](1) The quenching solution was prepared as follows: add 1.5 g of polyurethane, 4 g of acetone, and 8 g of tetrahydrofuran to a 100-mL three-necked flask, stir magnetically at 50°C for 2 hours, and dissolve to form a homogeneous solution. 0.04 g of nano-hydroxyapatite was added to the homogeneous solution, and the solution was magnetically stirred and mixed at room temperature to obtain a quenching solution. Put the quenching solution in a refrigerator pre-cooled to -30°C for 5 hours. After quenching, take it out of the refrigerator quickly, put it into 500 mL of ice-water mixture, remove acetone and tetrahydrofuran, and repeatedly change distilled water, wash, and freeze-dry to obtain polyurethane. Microspheres.

[0043] (2) 25g of ethanol, 30g of distilled water, 1.5g of sodium silicate, 0.1g of polyethylene glycol, and 0.01g of cetyltrimethylammonium bromide were added to the there-necked flask, and dissolved by magnetic stirring. After the dissolution was completed, 0...

Embodiment 3

[0047] (1) The preparation of the quenching liquid is as follows: add 1.2 g of polyurethane, 5 g of acetone, and 7 g of tetrahydrofuran to a 100-mL three-necked flask, stir magnetically at 50°C for 2 hours, and dissolve to form a homogeneous solution. 0.03 g of nano-hydroxyapatite was added to the homogeneous solution, and the solution was magnetically stirred and uniformly mixed at room temperature to obtain a quenching solution. Put the quenching solution in a refrigerator pre-cooled to -25 °C for 3 hours. After quenching, take it out of the refrigerator quickly, put it into 500 mL of ice-water mixture, remove acetone and tetrahydrofuran, and repeatedly change distilled water, wash, and freeze-dry to obtain polyurethane. Microspheres.

[0048] (2) 20g of ethanol, 30g of distilled water, 1.8g of sodium silicate, 0.1g of polyethylene glycol, and 0.01g of cetyltrimethylammonium bromide were added to the there-necked flask, and dissolved by magnetic stirring. After the dissoluti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
specific surface areaaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a kind of SiO 2 / The preparation method of chitosan-based lead ion-imprinted hollow microspheres, which includes the following steps: preparing polyurethane microspheres by thermally induced phase separation; mixing ethanol, distilled water, sodium silicate, polyethylene glycol and surfactant. Then, adding the polyurethane microspheres to form a mixed solution; using the mixed solution to prepare SiO 2 Hollow microspheres; dissolve chitosan in acrylic acid aqueous solution, add lead nitrate, and after mixing, add SiO 2 Hollow microspheres and ammonium persulfate, through a series of reactions, obtain the SiO 2 / Chitosan-based lead ion-imprinted hollow microspheres. The invention has the following beneficial effects: taking polymer microspheres as templates, loading orthosilicic acid on the surface thereof, and finally calcining to obtain SiO 2 Hollow microspheres, prepared from SiO 2 Hollow microspheres have high porosity and large specific surface area, and can be used as catalysts, adsorbents, and drug carriers.

Description

technical field [0001] The present invention relates to a kind of SiO 2 A preparation method of composite hollow microspheres imprinted with chitosan-based lead ions belongs to the technical field of adsorption materials. Background technique [0002] Chitosan is the only natural alkaline polysaccharide that exists in nature. It is obtained by deacetylation of chitin, and its molecule contains a large number of active amino and hydroxyl groups. The existence of these functional groups makes chitosan easy to combine with various metals to form metal-organic complexes, so as to achieve the purpose of removing heavy metal ions in water. At present, chitosan mainly exists in the form of powder, and the stability of chitosan in aqueous solution is relatively poor, so its application is limited. For the above reasons, researchers often load chitosan on some inorganic materials with large specific surface area and high porosity, and cross-link through cross-linking agents such as...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B01J20/26B01J20/28C02F1/28B01J20/30C02F101/20
CPCB01J20/103B01J20/268B01J20/24B01J20/28021C02F1/286C02F1/285C02F1/281C02F2101/20
Inventor 刘瑞来刘丽敏齐小宝赵升云胡家朋林皓付兴平赵瑨云
Owner 晋江瑞碧科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com