A kind of composite lubricating film and its preparation method, workpiece
A technology of lubricating film and workpiece, applied in the field of composite lubricating film and its preparation, can solve the problems of poor mechanical properties, easy to be oxidized, loss of lubricating effect, etc.
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Embodiment 1~14
[0024] The composite lubricating films of Examples 1-14 are made of lubricating material WS 2 And the composition of doping elements Ti and La, wherein the mass percentages of doping elements Ti and La are shown in Table 1.
[0025] Table 1 Mass percentage of doping elements in the composite lubricating film in Examples 1 to 14
[0026] Example Mass percentage of La element / % Mass percentage of Ti element / % 1 6.11 1.83 2 8.53 2.22 3 10.5 2.23 4 6.85 1.7 5 5.95 1.56 6 8.88 3.61 7 12.46 2.82 8 9.91 3.61 9 7.42 1.71 10 9.96 3.55 11 10.33 2.91 12 7.36 2.05 13 5.28 8.69 14 4.96 8.92
Embodiment 15~28
[0028] Lubricating material MoS in the composite lubricating film of Examples 15-28 2 And the composition of doping elements Ti and La, wherein the mass percentages of doping elements Ti and La are shown in Table 2.
[0029] Mass percent of doping elements in the composite lubricating film in Table 2 Examples 15-28
[0030]
[0031]
[0032] Two, the embodiment of the preparation method of composite lubricating film
Embodiment 29
[0034] This embodiment is the preparation method of the composite lubricating film of embodiment 1. When using the magnetron sputtering method to sputter the composite lubricating film on the surface of the substrate, the target used is a pure titanium target, a La / Ti alloy target (the atomic fraction of La is 50%, the atomic fraction of Ti is 50%) and WS 2 target, including the following steps:
[0035] (1) Clean the two substrates of stainless steel sheet and single crystal silicon wafer in absolute ethanol for 15 minutes respectively, and then clean them in high-purity acetone for 10 minutes. The chamber is evacuated to a pressure of 5e-4Pa, and then the working gas argon (gas flow rate is 40sccm) is introduced to a working pressure of 0.4Pa, and then the substrate is heated for 60min to 300°C;
[0036] (2) Under the condition of maintaining the working pressure of 0.4Pa, without applying the substrate bias, first use pure titanium to target the surface of the substrate to...
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