Shifting register unit, driving method, grid driving circuit and display device

A shift register and circuit technology, applied in the field of driving method, shift register unit, gate drive circuit and display device, capable of solving problems such as shift register unit working failure, achieving the effect of avoiding false opening and prolonging service life

Pending Publication Date: 2019-12-03
BOE TECH GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The embodiment of the present invention provides a shift register unit, a driving method, a gate drive circuit and a display device, which can solve

Method used

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  • Shifting register unit, driving method, grid driving circuit and display device
  • Shifting register unit, driving method, grid driving circuit and display device
  • Shifting register unit, driving method, grid driving circuit and display device

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Embodiment Construction

[0056] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe in detail the embodiments of the present invention in conjunction with the accompanying drawings.

[0057] The transistors used in all the embodiments of the present invention can be thin film transistors or field effect transistors or other devices with the same characteristics, and the transistors used in the embodiments of the present invention are mainly switching transistors according to their functions in circuits. Since the source and drain of the switching transistor used here are symmetrical, the source and drain are interchangeable. In the embodiments of the present invention, the source is called the first pole and the drain is called the second pole, or the drain is called the first pole and the source is called the second pole. According to the form in the accompanying drawings, it is stipulated that the middle terminal of th...

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PUM

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Abstract

The invention provides a shifting register unit, a driving method, a gate driving circuit and a display device. The shifting register unit comprises an anti-creeping circuit connected with a pull-up node and a control node, and a pull-down circuit is also connected with the control node. Since the anti-creeping circuit can control the potential of the control node based on the potential of the pull-up node, when the potential of the pull-up node is an effective potential, the potential of the control node can also be an effective potential. Moreover, when the potential of the pull-up node is an effective potential, the gate potential of the transistor included in the pull-down circuit is an ineffective potential, so that the gate-source voltage difference of the transistor connected with the control node can be kept at the ineffective potential, namely, the transistor connected with the control node is kept to be turned off, and the influence on the potential of the pull-up node is avoided. That is to say, the pull-down circuit can maintain the stability of the potential of the pull-up node based on the potential of the control node, and the problem that the transistor is turned onby mistake due to electric leakage is avoided.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a shift register unit, a driving method, a gate driving circuit and a display device. Background technique [0002] As a gate driving circuit fabricated on an array substrate, a shift register is widely used in the display field. The shift register usually includes a plurality of cascaded shift register units, and each shift register unit is used to drive a row of pixel units. The plurality of cascaded shift register units can realize the step-by-step shifting of each row of pixel units in the display device. Line scan driver to display images. [0003] Currently, the transistors included in each shift register unit are oxide thin film transistors (thin film transistors, TFTs) manufactured by an oxide process. However, since the oxide TFT is a depletion type TFT, the oxide TFT is prone to electric leakage after a long time of use. Moreover, when the leakage phenomenon is rela...

Claims

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Application Information

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IPC IPC(8): G09G3/20G11C19/28
CPCG09G3/20G11C19/28G09G2310/0286
Inventor 胡琪董家勇
Owner BOE TECH GRP CO LTD
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