A temperature-controllable ion implanter and temperature-controlling method thereof
An ion implanter and ion source technology, applied in circuits, discharge tubes, electrical components, etc., can solve the problems of inability to accurately control the temperature of the implanted target, affecting the quality and consistency of the output, and deviating from the process indicators.
Active Publication Date: 2022-07-08
XIAMEN YUDIAN AUTOMATION TECH
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Problems solved by technology
[0003] In the prior art, usually before ion implantation, the power of additional auxiliary heating or cooling device is simply set to achieve different required temperatures. In addition, there is also existing technology that controls the additional ion implantation in real time by measuring the temperature of the target during implantation. The power of the auxiliary heating or cooling device, but considering that the source of the target sheet temperature includes the self-heating of the ion beam bombardment and additional auxiliary heating or cooling, the deviation of the ion beam energy and the temperature deviation caused by the additional auxiliary heating or cooling, the existing It is also impossible to achieve separate detection and control in the technology, so that the temperature of the injection target cannot be accurately controlled, resulting in deviation from the process index, thereby affecting the quality and consistency of the output
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[0057]As an embodiment, the ion implanter further includes an alarm 91; the method further includes:
[0058] S505: While calculating the mean temperature, also calculate the corresponding mean variance;
[0059] The mean variance represents the temperature deviation at different positions on the target piece 6 only caused by the heating or cooling of the auxiliary processing module 7;
[0060] S506: when the alarm module 92 judges that the temperature difference exceeds the first threshold or the temperature mean exceeds the second threshold or the mean variance exceeds the third threshold, trigger the alarm 91 to give an alarm, thus, when the temperature difference or the temperature mean deviates too much, Or only when the temperature deviation of different points on the target piece 6 brought by the auxiliary processing module 7 is too large, the warning effect can be achieved in time.
[0061] As an embodiment, the ion implanter further includes a control panel 10; the m...
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The invention discloses a temperature-controllable ion implanter and a temperature-controlling method thereof. An ion beam is generated by arranging an ion source device; The processing module is used for auxiliary heating or cooling of the target, and the temperature sensor is used to measure the temperature at different positions on the back of the target. The processor receives the temperature signal of each temperature sensor, intercepts a maximum temperature, and calculates the remaining temperatures at the same time. The signal obtains a temperature mean value, and the calculated temperature maximum value and the temperature mean value are subtracted to obtain a temperature difference value. Since the target plate temperature comes from the self-heating of the ion beam irradiation and the heating or cooling of the auxiliary processing module, the calculated temperature difference value and the first preheating value are obtained. The set value ratio, the ratio of the average temperature and the second preset value, can accurately control the temperature deviation caused by the ion beam energy and the temperature deviation caused by the auxiliary processing module, and realize the accurate control of the target plate temperature of the ion implanter.
Description
technical field [0001] The invention relates to the technical field of ion implantation, in particular to a temperature-controllable ion implanter and a temperature-controlling method thereof. Background technique [0002] Ion implantation is a common process widely used in semiconductor manufacturing. Ion implantation technology is to ionize the atoms of a certain element, and accelerate the ions in an electric field to form an ion beam, and implant the target material after obtaining a high speed. Surface, a technology to change the physical or chemical properties of the surface of this material, because the ion beam is drawn from the ion source into a spot beam spot, and the ion beam is evenly scattered and covered by the relative movement of the beam spot and the target. Due to the large kinetic energy of the implanted ions on the entire target surface, the position of bombarding the surface of the target will increase the temperature. In the ion implantation process, s...
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IPC IPC(8): H01J37/317H01J37/304
CPCH01J37/3171H01J37/304
Inventor 孙永武嵇群群
Owner XIAMEN YUDIAN AUTOMATION TECH